High-responsivity and energy-saving ultraviolet photodetectors become crucial components for modern optoelectronic information sensing and communication systems. This study presents an advanced self-powered MXene/GaN Schottky ultraviolet photodetector that features a high-quality van der Waals interface to enhance photoresponsivity. The photodetector exhibits a high responsivity of 681.6 mA W−1 and a significant detectivity of 7.65 × 1013 Jones at zero bias. In a self-powered mode, the detector can operate robustly even under dim illumination (0.15 μW cm−2) due to the excellent Schottky contact and low amount of defect states at the MXene/GaN interface, which presents a strong intrinsic electric field. The photodetector has a high ultraviolet/visible rejection ratio (R360 nm/R400 nm) of 3.9 × 103 and a signal to noise ratio (SNR) of 2.4 × 105, which enable discrimination against visible light interference in real-world scenarios. We also demonstrated that the photodetectors worked well as ultraviolet signal receivers in an optical information communication system to accurately recognize pulsed signals transmitted from an ultraviolet light-emitting diode. These findings imply the great potential of van der Waals Schottky junctions between 2D MXenes and III-nitrides for high-performance photodetection and sensing in many integrated optoelectronic platforms.

中文翻译：

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自供电 MXene/GaN 范德华肖特基紫外光电探测器，具有出色的响应性和稳定性


高响应性和节能型紫外光电探测器成为现代光电信息传感和通信系统的关键部件。本研究提出了一种先进的自供电 MXene/GaN 肖特基紫外光电探测器，该探测器具有高质量的范德华接口，可增强光响应度。光电探测器在零偏置时表现出 681.6 mA W-1 的高响应度和 7.65 × 1013 Jones 的显著探测率。在自供电模式下，由于出色的肖特基接触和MXene/GaN界面处的少量缺陷态，探测器即使在昏暗的照明（0.15 μW cm-2）下也能稳健运行，从而呈现出强大的本征电场。该光电探测器具有 3.9 × 103 的高紫外/可见光抑制比 （R360 nm/R400 nm），信噪比 （SNR） 为 2.4 × 105，能够区分实际场景中的可见光干扰。我们还证明了光电探测器在光学信息通信系统中作为紫外线信号接收器工作得很好，可以准确识别从紫外线发光二极管发射的脉冲信号。这些发现意味着 2D MXenes 和 III 氮化物之间的范德华肖特基结在许多集成光电平台中用于高性能光检测和传感的巨大潜力。