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Comprehensive Investigations on Recovery Characteristics of Bias Temperature Instability in Planar and Trench SiC MOSFETs
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-10-23 , DOI: 10.1109/jestpe.2024.3485055 Kaiwei Li, Pengju Sun, Xinghao Zhou, Lan Chen, Qingsong Liu
中文翻译：
平面和沟槽 SiC MOSFET 中偏置温度不稳定性恢复特性的全面研究
更新日期：2024-10-23
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-10-23 , DOI: 10.1109/jestpe.2024.3485055 Kaiwei Li, Pengju Sun, Xinghao Zhou, Lan Chen, Qingsong Liu
中文翻译：
平面和沟槽 SiC MOSFET 中偏置温度不稳定性恢复特性的全面研究
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