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A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ADC for AI Edge Device
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2024-10-22 , DOI: 10.1109/jssc.2024.3470211 Hung-Hsi Hsu, Tai-Hao Wen, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Ashwin Sanjay Lele, Bo Zhang, Ping-Sheng Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsin Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
中文翻译：
用于 AI 边缘设备的 22 nm 浮点 ReRAM 内存计算宏，使用残余共享 ADC
更新日期：2024-10-22
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2024-10-22 , DOI: 10.1109/jssc.2024.3470211 Hung-Hsi Hsu, Tai-Hao Wen, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Ashwin Sanjay Lele, Bo Zhang, Ping-Sheng Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsin Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
中文翻译：
用于 AI 边缘设备的 22 nm 浮点 ReRAM 内存计算宏，使用残余共享 ADC
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