Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices. However, anti-ferroelectric capacitors are still facing the dual challenges of low energy density and efficiency to achieve state-of-the-art performance. Their large hysteresis and sharp first-order phase transition usually results in a low energy storage efficiency and easy breakdown, severely obscuring its future application. In this study, we demonstrate that anti-ferroelectric (Pb0.97La0.02)(Zr1−xSnx)O3 epitaxial thin films exhibit enhanced energy storage performance through local structural heterogeneity to moderate the first-order phase transition by calculating the corresponding polarization as a function of switching time for the first time. The films exhibit remarkable enhanced breakdown strength (∼3.47 MV/cm, ∼5 times the value for PbZrO3) and energy storage performance. Our endeavors have culminated in the ingenious formulation of a novel strategy, namely, the postponement of polarization processes, thereby elevating the breakdown strength and total energy storage performance. This landmark achievement has unveiled a fresh vista of investigative opportunities for advancing the energy storage prowess of electric dielectrics.

中文翻译：

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通过调节相变探索具有高储能性能的反铁电薄膜


反铁电薄膜以其标志性的双磁滞回线而闻名，并揭示了现代电子设备中介电电容器卓越的储能能力。然而，反铁电电容器仍然面临着低能量密度和低效率的双重挑战，以实现最先进的性能。它们的大磁滞和尖锐的一阶相变通常会导致储能效率低且容易击穿，严重掩盖其未来的应用。在这项研究中，我们证明了反铁电 （Pb0.97La0.02）（Zr1−xSnx）O3 外延薄膜通过局部结构异质性表现出增强的储能性能，通过首次计算相应的极化作为开关时间的函数来缓和一阶相变。这些薄膜表现出显着增强的击穿强度（∼3.47 MV/cm，∼ PbZrO3 值的 5 倍）和储能性能。我们的努力最终巧妙地制定了一种新颖的策略，即推迟极化过程，从而提高击穿强度和总储能性能。这一里程碑式的成就为提高电介质的储能能力带来了新的研究机会。