CMOS-compatible silicon nitride capping layers can be used to strain monolayer MoS2 transistors on rigid substrates, enhancing their electrical performance.

中文翻译：

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2D 晶体管感受到压力


CMOS 兼容的氮化硅封盖层可用于在刚性衬底上应变单层 MoS2 晶体管，从而提高其电气性能。