Memristors have gained significant attention in recent years due to their potential applications in computing and memory technology by offering higher performance, lower power consumption, and increased storage capacity. In this paper, a new type of volatile memristor is presented by analyzing the dynamic behavior of charge carriers within a metal–semiconductor–metal (MSM) structure. It is shown that an all‐electronic memristor is achieved through the confinement of majority charge carriers within the bulk semiconductor by the favor of high barrier Schottky contacts. The findings reveal a remarkable current offset between forward and backward scans, along with exceptional current pulse consistency with a tunable current level using pulse frequency. These characteristics greatly simplify the process of designing electrical circuits incorporating this memristor variant. Furthermore, this research paves the way for the development of crystalline semiconductor‐based memristors. While various semiconductors with controllable doping densities can be considered as potential candidates for this type of memristor, the calculations using silicon demonstrate the integration of this semiconductor with the current technology holds significant promise for two terminal memristors.

中文翻译：

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基于金属-半导体-金属结构体半导体中电载流子约束的全电子忆阻器


忆阻器近年来因其在计算和内存技术中的潜在应用而受到广泛关注，因为它们具有更高的性能、更低的功耗和更大的存储容量。在本文中，通过分析金属-半导体-金属 （MSM） 结构中载流子的动态行为，提出了一种新型的易失性忆阻器。结果表明，全电子忆阻器是通过高势垒肖特基触点将大多数电荷载流子限制在体半导体内来实现的。研究结果揭示了前向和后向扫描之间的显著电流偏移，以及使用脉冲频率的可调电流水平的出色电流脉冲一致性。这些特性大大简化了采用这种忆阻器变体的电路设计过程。此外，这项研究为基于晶体半导体的忆阻器的发展铺平了道路。虽然具有可控掺杂密度的各种半导体可以被认为是此类忆阻器的潜在候选者，但使用硅的计算表明，这种半导体与当前技术的集成为两个终端忆阻器带来了巨大的前景。