In this concise review, the recent advancements in fully inkjet‐printed (IJP) indium‐gallium‐zinc‐oxide (IGZO) thin‐film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a‐Si:H) as the primary channel material for liquid‐crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet‐printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost‐effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution‐processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.

中文翻译：

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全喷墨打印 IGZO 晶体管综合指南


在这篇简明的综述中，讨论了过去几年全喷墨打印 （IJP） 铟镓锌氧化物 （IGZO） 薄膜晶体管 （TFT） 的最新进展。IGZO 已取代氢化非晶硅 （a-Si：H） 成为液晶显示器 TFT 的主要通道材料，并因 IGZO 油墨的固溶加工性而受到进一步关注。尽管印刷 IGZO 的做法已经持续了大约 15 年，但全喷墨打印器件（包括电介质和电极元件）的实现代表了研究的最新里程碑，可能预示着 IGZO 晶体管的成本效益时代。在这篇评论中，在 IGZO 的介绍性阐述之后，重点是目前用于溶液处理 IGZO 器件的不同油墨配方，描述了所涉及的打印程序的复杂性，并阐述了与此类设备的电介质和电极打印有关的持续研究工作。