Platinum diselenide (PtSe2), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, there is a high demand for a synthesis method that can produce large‐scale and reliable high‐quality PtSe2. In this study, the growth of PtSe2 is presented by metal–organic vapor deposition on a variety of substrates. Comprehensive Raman, X‐ray photoelectron, and X‐ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the high quality of the deposited PtSe2. Domains within the films are found to be up to several hundreds of nanometers in size, and their highly ordered crystalline structure is evident from atomic‐scale measurements. Electrical characterization demonstrates improved conductivity relative to conventional synthesis methods. This study provides fundamental guidance for the scalable synthesis and implementation of high quality PtSe2 layers with controllable thickness, offering a key requirement for the implementation of PtSe2 in future applications.

中文翻译：

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高质量 PtSe2 的可扩展金属-有机化学气相沉积


二硒化铂 （PtSe2） 是一种 2D 贵金属二硫化物，由于其出色的性能，最近受到了极大的关注。它在变薄时会经历半金属到半导体的转变，在红外范围内提供带隙，并在环境条件下表现出优异的稳定性。这些特性使其成为光电和化学传感设备中的主要活性材料。然而，对能够生产大规模和可靠的高质量 PtSe2 的合成方法的需求很高。在这项研究中，PtSe2 的生长是通过金属有机气相沉积在各种衬底上的表现。全面的拉曼光谱、X 射线光电子和 X 射线衍射光谱以及扫描隧道显微镜表征揭示了沉积 PtSe2 的高质量。发现薄膜内的畴大小可达数百纳米，其高度有序的晶体结构从原子尺度的测量中可以明显看出。电学表征表明，相对于传统合成方法，电导率有所提高。本研究为可扩展合成和实现具有可控厚度的高质量 PtSe2 层提供了基础指导，为未来应用中 PtSe2 的实施提供了关键要求。