The researchers — who are based at Hewlett Packard Enterprise and the University of Michigan — fabricated eight-channel double-microring-resonator avalanche photodiodes with a responsivity of 0.4 A W^–1, a dark current of 1 nA and a bandwidth of 40 GHz at −8 V. Each channel has a transmission data rate of 160 gigabits per second and low electrical crosstalk of less than −50 dB. The all-silicon receiver is compatible with complementary metal–oxide–semiconductor (CMOS) fabrication processes and could reduce fabrication costs by 40% compared with avalanche photodiodes with silicon–germanium interfaces.

Original reference: Nat. Photon. 18, 928–934 (2024)

这些研究人员位于惠普企业和密歇根大学，制造了八通道双微环谐振器雪崩光电二极管，响应度为 0.4 A W^–1，暗电流为 1 nA，−8 V 时带宽为 40 GHz。每个通道的传输数据速率为每秒 160 Gb，电气串扰低于 −50 dB。全硅接收器与互补金属氧化物半导体 （CMOS） 制造工艺兼容，与具有硅-锗界面的雪崩光电二极管相比，可将制造成本降低 40%。

原始参考：Nat. Photon.18， 928–934 （2024）