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On the study of proximity magnetism in van der Waals graphene/CuCrP2S6 heterostructure via the anomalous Hall effect
Applied Physics Reviews ( IF 11.9 ) Pub Date : 2024-10-18 , DOI: 10.1063/5.0223563 Yuriy Dedkov, Elena Voloshina
Applied Physics Reviews ( IF 11.9 ) Pub Date : 2024-10-18 , DOI: 10.1063/5.0223563 Yuriy Dedkov, Elena Voloshina
Recently, several experimental works have appeared in the literature where induced magnetism in single- and few-layer graphene (SL-gr and FL-gr) interfaced with layered van der Waals materials was investigated via the application of the anomalous Hall effect (AHE). In most of these works, it is suggested that the observation of the AHE in such systems can be explained by a magnetic exchange interaction appearing at the interface between graphene and the underlying magnetic insulator. Considering the recently studied FL-graphene/bulk-CuCrP2S6 system as an example, our careful and rigorous analysis of recent experimental and theoretical data presented in the literature shows that the claimed observation of the AHE and magnetic proximity effect in this system is not supported. Moreover, the theoretically calculated electronic structures of the studied system contain serious errors and flaws that cannot be considered as an accurate description of such an interface and cannot be taken as solid support for the proposed proximity effect.
中文翻译:
通过反常霍尔效应研究范德华石墨烯/CuCrP2S6 异质结构中的邻近磁性
最近,文献中出现了几项实验工作,其中通过应用异常霍尔效应 (AHE) 研究了与层状范德华材料界面的单层和少层石墨烯(SL-gr 和 FL-gr)中的感应磁性。在大多数这些工作中,有人提出,在此类系统中对 AHE 的观察可以用出现在石墨烯和底层磁绝缘体之间的界面上的磁交换相互作用来解释。以最近研究的 FL-石墨烯/块状 CuCrP2S6 系统为例,我们对文献中介绍的最新实验和理论数据的仔细和严格的分析表明,声称在该系统中观察到 AHE 和磁邻近效应的说法并未得到支持。此外,所研究系统的理论计算电子结构包含严重的错误和缺陷,这些错误和缺陷不能被认为是对这种界面的准确描述,也不能被视为对所提出的邻近效应的坚实支持。
更新日期:2024-10-18
中文翻译:
通过反常霍尔效应研究范德华石墨烯/CuCrP2S6 异质结构中的邻近磁性
最近,文献中出现了几项实验工作,其中通过应用异常霍尔效应 (AHE) 研究了与层状范德华材料界面的单层和少层石墨烯(SL-gr 和 FL-gr)中的感应磁性。在大多数这些工作中,有人提出,在此类系统中对 AHE 的观察可以用出现在石墨烯和底层磁绝缘体之间的界面上的磁交换相互作用来解释。以最近研究的 FL-石墨烯/块状 CuCrP2S6 系统为例,我们对文献中介绍的最新实验和理论数据的仔细和严格的分析表明,声称在该系统中观察到 AHE 和磁邻近效应的说法并未得到支持。此外,所研究系统的理论计算电子结构包含严重的错误和缺陷,这些错误和缺陷不能被认为是对这种界面的准确描述,也不能被视为对所提出的邻近效应的坚实支持。