With the demand for increasingly smaller feature sizes, extreme ultraviolet (EUV) lithography has become the cutting-edge technology for fabricating highly miniaturized integrated circuits. However, the limited brightness of the EUV light source, the distinct exposure mechanism, and the high resolution required for patterns pose significant challenges for resist materials—particularly for conventional polymeric resists, which often suffer from low EUV absorption, high molecular weight, and nonhomogeneous composition. In this review, we focus on polymer resists for EUV lithography and offer our perspectives on recent exciting advances in the polymer chemistry of these resists. For example, in recent years, there has been significant progress in incorporating high EUV-absorbing moieties and photosensitizers into resists to enhance EUV absorbance and quantum efficiency. In addition, advancements have been made in developing single-component chemically amplified resists (CARs) with covalently attached photoacid generators (PAGs), as well as main-chain scission-type resists. Furthermore, the creation of precision oligomeric resists with precisely defined primary sequences and discrete molecular weights has opened new possibilities for EUV resist design. Lastly, we provide a critical outlook on the future opportunities and challenges in the development of EUV resists.

中文翻译：

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用于极紫外光刻的聚合物光刻胶化学的新兴趋势


随着对越来越小特征尺寸的需求，极紫外 （EUV） 光刻技术已成为制造高度小型化集成电路的尖端技术。然而，EUV 光源的有限亮度、独特的曝光机制以及图案所需的高分辨率对光刻胶材料构成了重大挑战，尤其是对于传统的聚合物光刻胶，它们通常具有 EUV 吸收率低、分子量高和成分不均匀等问题。在这篇综述中，我们重点介绍了用于 EUV 光刻的聚合物光刻胶，并就这些光刻胶的聚合物化学最新令人兴奋的进展提供了我们的观点。例如，近年来，在将高 EUV 吸收部分和光敏剂掺入光刻胶以增强 EUV 吸收率和量子效率方面取得了重大进展。此外，在开发具有共价连接光酸发生剂 （PAG） 的单组分化学扩增光刻胶 （CAR） 以及主链剪刀型光刻胶方面也取得了进展。此外，创建具有精确定义的一级序列和离散分子量的精密寡聚光刻胶为 EUV 光刻胶设计开辟了新的可能性。最后，我们对 EUV 光刻胶发展的未来机遇和挑战进行了批判性的展望。