Developing aluminium gallium nitride deep-ultraviolet (UVC) micro-light-emitting diodes (micro-LEDs) with sufficient power has been a challenge, which particularly limits these devices to various applications. However, advanced fabrication processes have been developed to enable the demonstration of highly efficient 270 nm UVC micro-LEDs and large-format UVC micro-LED displays with high resolution for maskless photolithography. Optical and electrical characterizations were performed on UVC micro-LEDs with sizes ranging from 3 µm to 100 μm to evaluate these emerging devices. The 3 μm device achieved a record-high peak external quantum efficiency of 5.7% and a maximum brightness of 396 W cm^–2. Moreover, 2,540 pixels per inch parallel-connected UVC micro-LED arrays featuring rear-side reflection layers exhibited emission uniformity and collimation. UVC micro-LED displays, with a resolution of 320 × 140, were explicitly designed for maskless photolithography applications utilizing a customized integrated circuit driver for optimal performance. The UVC micro-LEDs and UVC micro-displays provide sufficient doses to fully expose the photoresist film within seconds, owing to their enhanced current spreading uniformity, improved heat dispersion and superior light extraction efficiency. This work may open a path to maskless photolithography, potentially leading to revolutionary developments in the semiconductor industry.

开发具有足够功率的铝氮化镓深紫外 （UVC） 微型发光二极管 （micro-LED） 一直是一项挑战，这尤其限制了这些器件的各种应用。然而，已经开发了先进的制造工艺，以演示用于无掩模光刻的高效 270 nm UVC micro-LED 和高分辨率大幅面 UVC micro-LED 显示器。对尺寸从 3 μm 到 100 μm 的 UVC micro-LED 进行了光学和电气表征，以评估这些新兴器件。这款 3 μm 器件实现了创纪录的 5.7% 峰值外部量子效率和 396 W cm^–2 的最大亮度。此外，具有背面反射层的每英寸 2,540 个像素并行连接的 UVC 微型 LED 阵列表现出发射均匀性和准直性。UVC micro-LED 显示器的分辨率为 320 × 140，专为无掩模光刻应用而设计，利用定制的集成电路驱动器实现最佳性能。UVC 微型 LED 和 UVC 微型显示器具有增强的电流传播均匀性、改进的热扩散和卓越的光提取效率，可提供足够的剂量，可在几秒钟内完全曝光光刻胶膜。这项工作可能为无掩模光刻开辟一条道路，有可能引领半导体行业的革命性发展。