The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling and energy efficiency. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation nanoelectronics and optoelectronic applications, boasting high electron mobility, mechanical strength, and a customizable band gap. Despite these merits, the Fermi level pinning effect introduces uncontrollable Schottky barriers at metal–2D-TMD contacts, challenging prediction through the Schottky-Mott rule. These barriers fundamentally lead to elevated contact resistance and limited current-delivery capability, impeding the enhancement of 2D-TMD transistor and integrated circuit properties. In this review, we succinctly outline the Fermi level pinning effect mechanism and peculiar contact resistance behavior at metal/2D-TMD interfaces. Subsequently, highlights on the recent advances in overcoming contact resistance in 2D-TMDs devices, encompassing interface interaction and hybridization, van der Waals (vdW) contacts, prefabricated metal transfer and charge-transfer doping will be addressed. Finally, the discussion extends to challenges and offers insights into future developmental prospects.

中文翻译：

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接触电阻和界面工程：基于高性能 2D-TMD 的器件的进展


先进电子设备的发展取决于可持续的材料开发和开创性的研究突破。传统的基于半导体的电子技术在材料厚度、尺寸缩放和能源效率方面面临限制。原子薄的二维 （2D） 过渡金属硫化物 （TMD） 已成为下一代纳米电子学和光电应用的有前途的候选者，具有高电子迁移率、机械强度和可定制的带隙。尽管有这些优点，但费米能级固定效应在金属-2D-TMD 接触处引入了不可控的肖特基势垒，挑战了通过肖特基-莫特规则进行的预测。这些障碍从根本上导致接触电阻升高和电流传输能力受限，阻碍了 2D-TMD 晶体管和集成电路特性的增强。在这篇综述中，我们简洁地概述了金属/2D-TMD 界面的费米能级固定效应机制和奇特的接触电阻行为。随后，将重点介绍克服 2D-TMD 器件中接触电阻的最新进展，包括界面交互和混合、范德华 （vdW） 接触、预制金属转移和电荷转移掺杂。最后，讨论延伸到挑战，并提供了对未来发展前景的见解。