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Highly DUV to NIR-II responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators
Light: Science & Applications ( IF 20.6 ) Pub Date : 2024-10-15 , DOI: 10.1038/s41377-024-01604-0
Nan Ding, Wen Xu, Hailong Liu, Yuhan Jing, Zewen Wang, Yanan Ji, Jinlei Wu, Long Shao, Ge Zhu, Bin Dong

Low-cost, high-performance, and uncooled broadband photodetectors (PDs) have potential applications in optical communication etc., but it still remains a huge challenge to realize deep UV (DUV) to the second near-infrared (NIR-II) detection for a single broadband PD. Herein, a single PD affording broadband spectral response from 200 to 1700 nm is achieved with a vertical configuration based on quantum dots (QDs) heterojunction and quantum cutting luminescent concentrators (QC–LC). A broadband quantum dots heterojunction as absorption layer was designed by integrating CsPbI3:Ho3+ perovskite quantum dots (PQDs) and PbS QDs to realize the spectral response from 400 to 1700 nm. The QC–LC by employing CsPbCl3:Cr3+, Ce3+, Yb3+, Er3+ PQDs as luminescent conversion layer to collect and concentrate photon energy for boosting the DUV–UV (200–400 nm) photons response of PDs by waveguide effect. Such broadband PD displays good stability, and outstanding sensitivity with the detectivity of 3.19 × 1012 Jones at 260 nm, 1.05 × 1013 Jones at 460 nm and 2.23 × 1012 Jones at 1550 nm, respectively. The findings provide a new strategy to construct broadband detector, offering more opportunities in future optoelectronic devices.



中文翻译:


通过集成量子切割发光聚光器,实现高度 DUV 到 NIR-II 响应的宽带量子点异质结光电探测器



低成本、高性能和非制冷宽带光电探测器 (PD) 在光通信等领域具有潜在应用,但为单个宽带 PD 实现深紫外 (DUV) 到第二个近红外 (NIR-II) 检测仍然是一个巨大挑战。在此,通过基于量子点 (QD) 异质结和量子切割发光聚光器 (QC-LC) 的垂直配置,实现了提供 200 至 1700 nm 宽带光谱响应的单个 PD。通过集成 CsPbI3Ho 3+ 钙钛矿量子点 (PQD) 和 PbS QD,设计了宽带量子点异质结作为吸收层,以实现 400 至 1700 nm 的光谱响应。QC-LC 采用 CsPbCl3:Cr3+、Ce3+、Yb3+、Er3+ PQD 作为发光转换层,收集和集中光子能量,通过波导效应增强 PD 的 DUV-UV (200–400 nm) 光子响应。这种宽带 PD 具有良好的稳定性和出色的灵敏度,在 260 nm 处的检测率分别为 3.19 × 1012 Jones、460 nm 处的 1.05 ×10 13 Jones 和 1550 nm 处的 2.23 × 1012 Jones。研究结果为构建宽带探测器提供了新的策略,为未来的光电器件提供了更多机会。

更新日期:2024-10-15
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