This study presents an in-depth analysis of ferro-resistive switching (FRS) behaviors in a TiN/Hf0.5Zr0.5O2(HZO)/WOx/W ferroelectric tunnel junction (FTJ) device, with a particular focus on the role of the tungsten oxide (WOx) interface layer (IL). Structural examinations confirm the presence of the WOx IL, which significantly influences the FRS properties of the device. Electrical measurements indicate the devices exhibit stable and reproducible FRS characteristics with an ON/OFF ratio of 9.7, predominantly attributed to the tunneling electro-resistance (TER) effect driven by the ferroelectric polarization. Comprehensive numerical simulations, incorporating the nucleation-limited switching model and Simmons tunneling mechanism, provide detailed insights into how the WOx IL and the trapped charges at the HZO/WOx interface affect polarization switching mechanisms and the electronic potential barrier profile. These findings underscore the importance of interface effects in HfO2-based FTJs and advance the understanding of the TER mechanism in multilayer ferroelectric systems.

中文翻译：

---

具有界面层效应的 TiN/Hf0.5Zr0.5O2/WOx/W 铁电隧道结中铁电阻开关机理的研究


本研究深入分析了 TiN/Hf0.5Zr0.5O2（HZO）/WOx/W 铁电隧道结 （FTJ） 器件中的铁阻开关 （FRS） 行为，特别关注氧化钨 （WOx） 界面层 （IL） 的作用。结构检查证实了 WOx IL 的存在，这显着影响了设备的 FRS 特性。电气测量表明，这些器件表现出稳定且可重现的 FRS 特性，开/关比为 9.7，这主要归因于铁电极化驱动的隧穿电阻 （TER） 效应。综合数值仿真结合了成核限制开关模型和 Simmons 隧穿机制，详细介绍了 WOx IL 和 HZO/WOx 界面处的俘获电荷如何影响极化开关机制和电子势垒剖面。这些发现强调了界面效应在基于 HfO2 的 FTJ 中的重要性，并促进了对多层铁电系统中 TER 机制的理解。