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Monolithic 3D integration with 2D materials
Nature Electronics ( IF 33.7 ) Pub Date : 2024-10-09 , DOI: 10.1038/s41928-024-01260-7 Sangmoon Han, Ji-Yun Moon, Sang-Hoon Bae
Nature Electronics ( IF 33.7 ) Pub Date : 2024-10-09 , DOI: 10.1038/s41928-024-01260-7 Sangmoon Han, Ji-Yun Moon, Sang-Hoon Bae
The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.
中文翻译:
与 2D 材质的整体 3D 集成
2D 二硫化钼内存晶体管和石墨烯化学晶体管的单片 3D 集成可用于创建具有高互连密度和小于 50 nm 的层之间垂直分离的近传感器计算芯片。
更新日期:2024-10-09
中文翻译:
与 2D 材质的整体 3D 集成
2D 二硫化钼内存晶体管和石墨烯化学晶体管的单片 3D 集成可用于创建具有高互连密度和小于 50 nm 的层之间垂直分离的近传感器计算芯片。