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Signature of pressure-induced topological phase transition in ZrTe5
npj Quantum Materials ( IF 5.4 ) Pub Date : 2024-10-05 , DOI: 10.1038/s41535-024-00679-7
Zoltán Kovács-Krausz, Dániel Nagy, Albin Márffy, Bogdan Karpiak, Zoltán Tajkov, László Oroszlány, János Koltai, Péter Nemes-Incze, Saroj P. Dash, Péter Makk, Szabolcs Csonka, Endre Tóvári

The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.



中文翻译:


ZrTe5 中压力诱导拓扑相变的特征



层状范德华材料 ZrTe5 被称为候选拓扑绝缘体 (TI),但其拓扑相以及与其他性质(如明显的狄拉克半金属态)的关系仍然是一个争论的话题。我们采用半经典多载流子传输 (MCT) 模型来分析 ZrTe5 纳米器件在高达 2 GPa 的静水压力下的磁传输。在热活化的背景下评估 MCT 结果在 10 到 300 K 之间的温度依赖性,我们获得了化学势附近的导带和价带边缘的位置。我们发现了带隙随着压力的增加而闭合和重新打开的证据,这与从弱 TI 到强 TI 的相变一致。这与从头到尾能带结构计算的预期相符,也符合之前的观察结果,即 CVT 生长的 ZrTe5 在环境条件下是一种弱 TI。

更新日期:2024-10-05
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