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Additive engineering for Sb2S3 indoor photovoltaics with efficiency exceeding 17%
Light: Science & Applications ( IF 20.6 ) Pub Date : 2024-10-02 , DOI: 10.1038/s41377-024-01620-0
Xiao Chen, Xiaoxuan Shu, Jiacheng Zhou, Lei Wan, Peng Xiao, Yuchen Fu, Junzhi Ye, Yi-Teng Huang, Bin Yan, Dingjiang Xue, Tao Chen, Jiejie Chen, Robert L. Z. Hoye, Ru Zhou

Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb2S3 is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb2S3 solar cells is limited by nonradiative recombination, which is dependent on the quality of the absorber films. Additive engineering is an effective strategy to fine tune the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb2S3 films to be controlled, enabling the deposition of high-quality Sb2S3 absorbers with reduced grain boundary density, optimized band positions, and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb2S3 films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb2S3 absorber films, the MEA-modulated Sb2S3 solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5 G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb2S3 IPVs. Furthermore, we construct high performance large-area Sb2S3 IPV minimodules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb2S3 photovoltaics for indoor energy harvesting.



中文翻译:


Sb2S3室内光伏增材工程效率超过17%



室内光伏 (IPV) 为物联网 (IoT) 电子产品提供可持续供电已引起越来越多的关注。 Sb 2 S 3是一种很有前途的IPV候选材料,其带隙约为1.75 eV,接近室内能量收集的最佳值。然而,Sb 2 S 3太阳能电池的性能受到非辐射复合的限制,这取决于吸收膜的质量。增材工程是微调溶液加工薄膜性能的有效策略。这项工作表明,在前驱体溶液中添加单乙醇胺(MEA)可以控制Sb 2 S 3薄膜的成核和生长,从而能够沉积高质量的Sb 2 S 3吸收剂,并具有降低的晶界密度、优化的能带位置,并增加载流子浓度。补充计算表明,MEA 的加入导致更有效、更有利的沉积,从而增强基底上的异质成核,从而增加晶粒尺寸并加速 Sb 2 S 3薄膜的沉积速率。由于Sb 2 S 3吸收膜中载流子复合受到抑制并改善了载流子传输,MEA调制的Sb 2 S 3太阳能电池在AM1.5 G照明下产生了7.22%的功率转换效率(PCE),并且IPV在 1000 勒克斯白光发光二极管 (WLED) 照明下,PCE 为 17.55%,这是迄今为止 Sb 2 S 3 IPV 报道的最高值。 此外,我们构建了高性能大面积Sb 2 S 3 IPV微型模块为物联网无线传感器供电,并实现了办公室WLED照明下环境参数的长期连续记录。这项工作凸显了Sb 2 S 3光伏发电在室内能量收集方面的巨大前景。

更新日期:2024-10-02
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