A class of III–V semiconductors with memristive properties has been created by combining computational screening and experimental synthesis. The synthesized compounds have gate-tunable synaptic functions, and could be used to create energy-efficient, reprogrammable logic devices that are compatible with existing silicon technology.

中文翻译：

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一种识别和合成忆阻型 III-V 半导体的方法


通过结合计算筛选和实验合成，创建了一类具有忆阻特性的 III-V 半导体。合成的化合物具有门可调突触功能，可用于创建与现有硅技术兼容的节能、可重编程的逻辑器件。