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How we made the 1,000 V silicon carbide Schottky diode
Nature Electronics ( IF 33.7 ) Pub Date : 2024-09-30 , DOI: 10.1038/s41928-024-01252-7
Tsunenobu Kimoto

Silicon carbide power devices are an important component in a variety of technologies. Tsunenobu Kimoto recounts how the first 1 kV silicon carbide Schottky diodes were created.

中文翻译:


我们如何制造 1,000 V 碳化硅肖特基二极管



碳化硅功率器件是多种技术的重要组成部分。 Tsunenobu Kimoto 讲述了第一个 1 kV 碳化硅肖特基二极管的制造过程。
更新日期:2024-09-30
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