Nature ( IF 50.5 ) Pub Date : 2024-09-25 , DOI: 10.1038/s41586-024-07983-z Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski, Zexuan Zhang, Anna Feduniewicz-Zmuda, Mikolaj Chlipala, Marcin Siekacz, David Muller, Huili Grace Xing, Debdeep Jena, Henryk Turski
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide-bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along a unique crystal axis1. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis substantially different in their physical and chemical properties2. In the past three decades, the cation (gallium) face of GaN has been used for photonic devices such as light-emitting diodes (LEDs) and lasers3,4,5. Although the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high-electron-mobility transistors (HEMTs) owing to favourable polarization discontinuities6. In this work, we introduce dualtronics, showing that it is possible to make photonic devices on the cation face and electronic devices on the anion face of the same semiconductor wafer. This opens the possibility for making use of both faces of polar semiconductors in a single structure, in which electronic, photonic and acoustic properties can be implemented on opposite faces of the same wafer, markedly enhancing the functional capabilities of this revolutionary semiconductor family.
中文翻译:
将极性半导体晶片的两面用于功能器件
与硅等非极性半导体不同,宽带隙半导体氮化镓 (GaN) 的反转对称性破裂,导致沿独特晶轴1 产生较大的电子极化。这使得垂直于极轴的半导体晶片的两个表面在物理和化学性质上存在很大差异2。在过去的三十年里,GaN 的阳离子(镓)表面已被用于发光二极管 (LED) 和激光器等光子器件3,4,5。尽管阳离子面也主要用于电子设备,但由于有利的极化不连续性,阴离子(氮)面最近显示出用于高电子迁移率晶体管 (HEMT) 的前景6。在这项工作中,我们介绍了 dualtronics,表明可以在同一半导体晶片的阳离子面上制造光子器件,在阴离子面上制造电子器件。这为在单个结构中使用极性半导体的两个面提供了可能性,其中电子、光子和声学特性可以在同一晶圆的相对面上实现,从而显着增强了这一革命性半导体系列的功能能力。