Energy storage devices with high energy storage density (U_ESD), fast operating speed, and high output power are indispensable for modern energy needs. This study presents a wafer-scale epitaxial antiferroelectric ZrO₂/TiN heterostructure with a state-of-the-art high U_ESD of ∼118.6 J cm⁻³. This significant U_ESD originates from the predominant [110] antiferroelectric polar axis of ZrO₂ oriented out-of-plane, which is confirmed by macroscopic and microscopic analyses of the epitaxial relationships. The construction of a coincidence site lattice indicates the low lattice mismatch between ZrO₂(110) and TiN(111). The stacking of ZrO₂ sublayers demonstrates the importance of precise epitaxy in controlling crystal orientation, minimizing leakage current, and improving antiferroelectric characteristics. Furthermore, the epitaxial growth of ZrO₂ enables a clear observation of inductive-like negative capacitance response, providing insights into antiferroelectric dynamics. The high U_ESD highlights the significance of atomic layer epitaxy for high-quality antiferroelectric heterostructures, particularly in epitaxial growth methods and energy storage applications.

中文翻译：

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原子层外延生长的反铁电异质结构中强大的能量存储密度和负电容


具有高储能密度（ U _ESD ）、快运行速度和高输出功率的储能器件是现代能源需求不可或缺的。这项研究提出了一种晶圆级外延反铁电 ZrO ₂ /TiN 异质结构，其最先进的高U _ESD约为 118.6 J cm ^-3 。这种显着的U _ESD源自ZrO ₂平面外取向的主要[110]反铁电极轴，这通过外延关系的宏观和微观分析得到证实。重合位点晶格的构造表明ZrO ₂ (110)和TiN(111)之间的低晶格失配。 ZrO ₂子层的堆叠证明了精确外延在控制晶体取向、最小化漏电流和改善反铁电特性方面的重要性。此外，ZrO ₂的外延生长能够清晰地观察到类似电感的负电容响应，从而为反铁电动力学提供了见解。高U _ESD凸显了原子层外延对于高质量反铁电异质结构的重要性，特别是在外延生长方法和储能应用中。