Transient photovoltage (TPV) decay measurements have commonly been used to estimate the charge carrier lifetimes in solar cell devices. However, it has recently been demonstrated that an intrinsic material property, such as the effective bulk carrier lifetime, can be severely masked by other device-related dynamics, such as the composite resistance-capacitance (RC) discharge times, particularly at lower illumination intensities. In this work, we systematically investigate these issues by examining the role that the device’s differential resistance plays on the TPV lifetimes as a function of the open circuit voltage. Using two different sets of perovskite solar cells, one of which was passivated through a special surface treatment chemistry, we clearly demonstrate that small differences in dark current density vs voltage (J–V) measurements are strongly correlated with TPV lifetime measurements in both devices. Using the two-diode recombination current model, we show that TPV lifetimes can be successfully predicted from a very fundamental yet often overlooked steady-state measurement technique.

中文翻译：

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通过暗 J-V 分析了解钙钛矿太阳能电池中的瞬态光电压寿命


瞬态光电压 （TPV） 衰减测量通常用于估计太阳能电池器件中的电荷载流子寿命。然而，最近已经证明，材料固有的特性，如散货船的有效寿命，可以被其他与器件相关的动力学严重掩盖，如复合电阻-电容 （RC） 放电时间，特别是在较低的照明强度下。在这项工作中，我们通过检查器件的差分电阻作为开路电压对 TPV 寿命的作用来系统地研究这些问题。使用两组不同的钙钛矿太阳能电池，其中一组通过特殊的表面处理化学进行钝化，我们清楚地证明，暗电流密度与电压 （J-V） 测量值的微小差异与两种器件中的 TPV 寿命测量值密切相关。使用双二极管复合电流模型，我们表明 TPV 寿命可以通过一种非常基本但经常被忽视的稳态测量技术成功预测。