Recently, Zintl Mg3Sb2-based compounds have attracted attention due to high thermoelectric performance, but most studies are concentrated on bulk materials with few on films and devices, limiting their applications for microelectronics. Here, p-type Mg3Sb2 films near stoichiometric-ratio are successfully fabricated using the multi-step experimental strategies based on the magnetron sputtering method. By tuning the energy structure and carrier transport, their thermoelectric performance is significantly improved, with a power factor up to 258.64 μW m−1 K−2 at ∼623 K. A Mg3Sb2-based generator is fabricated using these films, representing the first report of such a device. The output performance of this generator is evaluated and its power density is found to reach 9.4 μW cm−2 at ΔT of 40 K, showing good potential for powering electronics. Furthermore, the generator shows good stability with no significant change in output properties after storage in air for 40 days or over periodic cycles of high- and room-temperature operation.

中文翻译：

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通过多步退火策略制造的接近化学计量比的 Mg3Sb2 热电薄膜


近年来，基于 Zintl Mg3Sb2 的化合物因其高热电性能而受到关注，但大多数研究集中在块状材料上，很少研究薄膜和器件，限制了它们在微电子学中的应用。在这里，使用基于磁控溅射法的多步骤实验策略成功地制造了接近化学计量比的 p 型 Mg3Sb2 薄膜。通过调整能量结构和载流子传输，它们的热电性能得到显著提高，在 ∼623 K 时功率因数高达 258.64 μW m-1 K-2。使用这些薄膜制造了基于 Mg3Sb2 的发生器，代表了这种设备的首次报道。评估了该发生器的输出性能，发现其功率密度在 40 K 的 ΔT 下达到 9.4 μW cm-2，显示出为电子设备供电的良好潜力。此外，该发生器在空气中储存 40 天或在高温和室温运行周期性循环后，输出特性没有显着变化。