Contact engineering enhances electronic device performance and functions but often involves costly, inconvenient fabrication and material replacement processes. We develop an in situ, reversible, full-device-scale approach to reconfigurable 2D van der Waals contacts. Ideal p-type Schottky contacts free from surface dangling bonds and Fermi-level pinning are constructed at structurally superlubric graphite-MoS₂ interfaces. Pressure control is introduced, beyond a threshold of which tunneling across the contact can be activated and amplified at higher loads. Record-high figures of merits such an ideality factor nearing 1 and an off-state current of 10^–11 A were reported. The concept of on-device moving contacts is demonstrated through a wearless Schottky generator, operating with an optimized overall efficiency of 50% in converting weak, random external stimuli into electricity. The device combines generator and pressure-sensor functions, achieving a high current density of 31 A/m² and withstanding over 120,000 cycles, making it ideal for neuromorphic computing and mechanosensing applications.

中文翻译：

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器件上压力可调的移动肖特基触点


接触工程可以提高电子设备的性能和功能，但通常涉及昂贵、不方便的制造和材料更换过程。我们开发了一种原位、可逆、全器件规模的可重构 2D 范德华接触方法。理想的 p 型肖特基触点没有表面悬空键和费米能级钉接，在结构超润滑石墨-MoS₂ 界面上构建。引入了压力控制，超过该阈值，在较高负载下可以激活和放大跨触点的隧道。据报道，理想因子接近 1 和 ^10-11 A 的断态电流等品质因数创下历史新高。设备上移动触点的概念通过无磨损的肖特基发生器进行演示，该发生器在将微弱、随机的外部刺激转换为电能方面以 50% 的优化整体效率运行。该器件结合了发电机和压力传感器功能，实现了 31 A/m² 的高电流密度，可承受超过 120,000 次循环，使其成为神经形态计算和机械传感应用的理想选择。