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Photoresponsive Two-Dimensional Magnetic Junctions for Reconfigurable In-Memory Sensing
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-17 , DOI: 10.1021/acsnano.4c09735 Wenxuan Zhu 1 , Jiacheng Sun 2 , Yuan Cheng 2, 3 , Hua Bai 1 , Lei Han 1 , Yuyan Wang 2 , Cheng Song 1 , Feng Pan 1
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-17 , DOI: 10.1021/acsnano.4c09735 Wenxuan Zhu 1 , Jiacheng Sun 2 , Yuan Cheng 2, 3 , Hua Bai 1 , Lei Han 1 , Yuyan Wang 2 , Cheng Song 1 , Feng Pan 1
Affiliation
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Magnetic tunneling junctions (MTJs) lie in the core of magnetic random access memory, holding promise in integrating memory and computing to reduce hardware complexity, transition latency, and power consumption. However, traditional MTJs are insensitive to light, limiting their functionality in in-memory sensing─a crucial component for machine vision systems in artificial intelligence applications. Herein, the convergence of magnetic memory with optical sensing capabilities is achieved in the all-two-dimensional (2D) magnetic junction Fe3GaTe2/WSe2/Fe3GaTe2, which combines 2D magnetism and optoelectronic properties. The clean intrinsic band gap and prominent photoresponse of interlayer WSe2 endow the tunneling barrier with optical tunability. The on–off states of junctions and the magnetoresistance can be flexibly controlled by the intensity of the optical signal at room temperature. Based on the optical-tunable magnetoresistance in all-2D magnetic junctions, a machine vision system with the architecture of in-memory sensing and computing is constructed, which possesses high performance in image recognition. Our work exhibits the advantages of 2D magneto-electronic devices and extends the application scenarios of magnetic memory devices in artificial intelligence.
中文翻译：
用于可重构内存传感的光响应二维磁结
磁性隧道结 (MTJ) 位于磁性随机存取存储器的核心，有望集成存储器和计算，以降低硬件复杂性、转换延迟和功耗。然而，传统的 MTJ 对光不敏感，限制了它们在内存传感中的功能——内存传感是人工智能应用中机器视觉系统的关键组件。在此，在全二维（2D）磁性结Fe 3 GaTe 2 /WSe 2 /Fe 3 GaTe 2中实现了磁存储器与光学传感能力的融合，其结合了2D磁性和光电特性。层间WSe 2干净的本征带隙和突出的光响应赋予了隧道势垒光学可调性。室温下光信号的强度可以灵活控制结的开关状态和磁阻。基于全二维磁结中的光可调磁阻，构建了具有内存传感和计算架构的机器视觉系统，具有高性能的图像识别能力。我们的工作展示了二维磁电子器件的优势，扩展了磁存储器件在人工智能中的应用场景。
更新日期：2024-09-17
中文翻译：
用于可重构内存传感的光响应二维磁结
磁性隧道结 (MTJ) 位于磁性随机存取存储器的核心，有望集成存储器和计算，以降低硬件复杂性、转换延迟和功耗。然而，传统的 MTJ 对光不敏感，限制了它们在内存传感中的功能——内存传感是人工智能应用中机器视觉系统的关键组件。在此，在全二维（2D）磁性结Fe 3 GaTe 2 /WSe 2 /Fe 3 GaTe 2中实现了磁存储器与光学传感能力的融合，其结合了2D磁性和光电特性。层间WSe 2干净的本征带隙和突出的光响应赋予了隧道势垒光学可调性。室温下光信号的强度可以灵活控制结的开关状态和磁阻。基于全二维磁结中的光可调磁阻，构建了具有内存传感和计算架构的机器视觉系统，具有高性能的图像识别能力。我们的工作展示了二维磁电子器件的优势，扩展了磁存储器件在人工智能中的应用场景。
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