Emerging topological polar domains have a wide range of potential applications in electronic devices. It is critical to accurately manipulate these topological domains by electrical fields and explore their exotic properties for making more energy-efficient high-density non-volatile memories. Herein, we demonstrate that skyrmion-like polar nanodomains appear at room temperature in SrTiO3/PbTiO3 bilayer heterostructures by balancing the elastic and electrostatic energies via varying the SrTiO3 capping layer thickness. These polar nanodomains, stable at room temperature, can be electrically written, erased, and rewritten into the bilayer by applying an appropriate bias on the conductive tip of an atomic force microscope. The lateral size and location of these polar nanodomains can be precisely controlled. Moreover, ring-shaped conductive domain walls are observed around these polar nanodomains, with on/off ratios of more than two orders of magnitude with respect to the ferroelectric background. Based on these characteristics, the polar nanodomains can be created, erased, and probed electrically, suggesting applications for high-density ferroelectric hard disks.

中文翻译：

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用于高密度铁电硬盘的高度可调的斯格明子极性纳米域


新兴的拓扑极域在电子器件中具有广泛的潜在应用。通过电场准确地操纵这些拓扑域并探索它们的奇异特性对于制造更节能的高密度非易失性存储器至关重要。在此，我们通过改变 SrTiO3 覆盖层厚度来平衡弹性能和静电能，证明了在室温下 SrTiO3/PbTiO3 双层异质结构中出现了类斯格明子极性纳米域。这些极性纳米域在室温下稳定，可以通过在原子力显微镜的导电尖端上施加适当的偏压来电写入、擦除和重写到双层中。这些极性纳米域的横向尺寸和位置可以精确控制。此外，在这些极性纳米域周围观察到环形导电畴壁，相对于铁电背景，其开/关比超过两个数量级。基于这些特性，可以创建、擦除和电探测极性纳米域，这表明了高密度铁电硬盘的应用。