As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

中文翻译：

---

基于碲的电子学和光电子学


作为真正的一维系统，VIA 碲 （Te） 由三角形晶格内的范德华键合分子链组成。这种独特的晶体结构赋予了 Te 许多有趣的特性，包括电子、光电、热电、压电、手性和拓扑特性。此外，Te 的带隙表现出厚度依赖性，范围从本体 0.31 eV 到单层极限 1.04 eV。这些不同的特性使 Te 适用于广泛的应用，解决已存在的和新出现的挑战。本文首先详细阐述了 Te 的晶体结构和基本性质，然后详细讨论了其各种合成方法，主要包括固溶相以及化学和物理气相沉积技术。这些方法构成了设计以 Te为中心的器件的基础。然后介绍了 Te 纳米结构实现的器件应用，重点是电子学、光电子学、传感器和大规模电路。此外，还讨论了基于 Te 的场效应晶体管的性能优化策略。最后，分享了对未来研究方向和该领域未来挑战的见解。