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Robust Magnetic-Field-Free Perpendicular Magnetization Switching by Manipulating Spin Polarization Direction in RuO2/[Pt/Co/Pt] Heterojunctions
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-16 , DOI: 10.1021/acsnano.4c09004
Yibo Fan, Qian Wang, Wei Wang, Dong Wang, Qikun Huang, Zhenxing Wang, Xiang Han, Yanxue Chen, Lihui Bai, Shishen Yan, Yufeng Tian

Perpendicular magnetization switching by a magnetic-field-free, energy-efficient electrical approach has remained a great challenge. Here, we demonstrate the realization of robust magnetic-field-free perpendicular magnetization switching in the (101)RuO2/[Pt/Co/Pt] heterojunction by manipulating the spin polarization direction. We proposed that the relative strength of out-of-plane spin currents with out-of-plane spin polarization σz and in-plane spin polarization σy can be effectively manipulated by tuning the nominal thickness of [Pt/Co/Pt] multilayers and the direction of applied electric current with respect to the RuO2 crystal orientation. When the electric current is applied along RuO2 [010] direction and the net spin current with spin polarization σy is canceled out, the “robust” perpendicular magnetization switching driven by pure σz is achieved in (101)RuO2/[Pt/Co/Pt], where the term “robust” means that the switching polarity (counterclockwise) does not change and the switching ratio reduces very slowly with increasing magnitude of in-plane magnetic field Hx and/or Hy in a wide range of ±500 Oe. Our findings provide a technique to effectively manipulate the spin currents, which is beneficial for the investigation of antiferromagnetic spintronic devices with high magnetic field stability and reliable magnetization switching.

中文翻译:


通过操纵 RuO2/[Pt/Co/Pt] 异质结中的自旋极化方向实现鲁棒的无磁场垂直磁化切换



通过无磁场、节能的电气方法进行垂直磁化切换仍然是一个巨大的挑战。在这里,我们展示了通过操纵自旋极化方向在 (101)RuO 2 /[Pt/Co/Pt] 异质结中实现鲁棒的无磁场垂直磁化翻转。我们提出,通过调整[Pt/Co/Pt]多层膜的标称厚度,可以有效地控制具有面外自旋极化σ z和面内自旋极化σ y的面外自旋电流的相对强度以及相对于RuO 2晶体取向的施加电流的方向。当沿 RuO 2 [010] 方向施加电流并抵消具有自旋极化σ y 的净自旋电流时,在 (101)RuO 2 /[Pt 中实现了由纯σ z驱动的“鲁棒”垂直磁化翻转。 /Co/Pt],其中术语“鲁棒”意味着开关极性(逆时针)不会改变,并且开关比在较宽范围内随着面内磁场H x和/或H y幅度的增加非常缓慢地降低±500 Oe。我们的研究结果提供了一种有效操纵自旋电流的技术,这有利于研究具有高磁场稳定性和可靠磁化切换的反铁磁自旋电子器件。
更新日期:2024-09-16
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