Ultrathin catalytical silicon nanowires (SiNWs), grown as orderly arrays upon glass substrates, are ideal 1D channels for the construction of high-performance field effect transistors for low-power and high aperture/transparency electronics. In this work, a rather uniform growth integration of high-density ultrathin SiNWs has been accomplished directly on glass substrate at 290 °C, via an in-plane solid–liquid-solid mechanism. The indium (In) catalyst thickness deposited on the dense guiding terrace steps was identified as a key parameter to suppress the size dispersion of the In droplets, and thus enable a uniform growth of ultrathin SiNWs with diameters down to DNW=21.8 ± 1.8 nm, a close-to-unity guided growth rate and an excellent transparency > 90 % in spectrum ranging from 350 nm to 950 nm. Based on a convenient dry plasma etching and low-temperature passivation procedure, high-performance SiNW transistors have been successfully fabricated upon a dense array of parallel SiNWs as channels with a narrow NW-to-NW spacing of 100 nm. A high current ratio Ion/Ioff > 107, a low off-state current down to 0.1 pA, a steep subthreshold swing of SS∼120 mV dec-1 and excellent positive and negative bias stabilities have been demonstrated, as well as SiNW-based inverter logics that achieve a gain of 14.6 V/V under a drive voltage of 2.25 V. These results highlight the potential of catalytic SiNWs to serve as advantageous 1D channels for large-area display or transparent electronics.

中文翻译：

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用于玻璃上透明薄膜晶体管的均匀 22 nm 以下硅纳米线的高密度集成


超薄催化硅纳米线 （SiNW） 在玻璃衬底上以有序阵列生长，是构建用于低功率和高孔径/透明度电子产品的高性能场效应晶体管的理想 1D 通道。在这项工作中，高密度超薄 SiNW 的相当均匀的生长积分是在 290 °C 的玻璃衬底上通过面内固-液-固机制直接完成的。沉积在密集的导向阶梯上的铟 （In） 催化剂厚度被确定为抑制 In 液滴尺寸分散的关键参数，从而能够使直径低至 DNW=21.8 ± 1.8 nm 的超薄 SiNWs 均匀生长，接近统一的导向生长速率，在 350 nm 至 950 nm 的光谱范围内具有优异的透明度 > 90 %。基于方便的干等离子体刻蚀和低温钝化程序，高性能 SiNW 晶体管已成功制造在密集的平行 SiNW 阵列上作为通道，NW 到 NW 间距为 100 nm。该器件具有高电流比 Ion/Ioff > 107、低至 0.1 pA 的低关断电流、SS∼120 mV dec-1 的陡峭亚阈值摆幅和出色的正负偏置稳定性，以及基于 SiNW 的逆变器逻辑，在 2.25 V 驱动电压下可实现 14.6 V/V 的增益。这些结果突出了催化 SiNW 作为大面积显示器或透明电子设备的有利 1D 通道的潜力。