As third-generation semiconductors advance, gallium nitride (GaN)-based devices are gaining significant attention. However, the processing of GaN substrates directly affects device performance. This paper proposes an ICP etching-chemical–mechanical polishing (CMP) strategy to efficiently produce GaN single-crystal substrates with non-destructive, atomic-level surfaces. The process time is significantly reduced from 15 h to 1.5 h. The wet oxidation reaction during CMP eliminates impurities and defects from dry etching. FIB-STEM tests confirm that this method is non-destructive, as the ICP technique enables isotropic etching, and CMP introduces no new damage to the substrate. This approach enhances the productivity of large-size GaN single-crystal substrates, promoting their broader application in laser displays, RF devices, and power electronics.

中文翻译：

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通过感应耦合等离子体刻蚀和化学机械抛光高效获得无损 GaN （0001）


随着第三代半导体的进步，基于氮化镓 （GaN） 的器件越来越受到广泛关注。然而，GaN 衬底的加工直接影响器件性能。本文提出了一种 ICP 蚀刻-化学-机械抛光 （CMP） 策略，以高效生产具有非破坏性原子级表面的 GaN 单晶衬底。处理时间从 15 小时显著缩短到 1.5 小时。CMP 过程中的湿氧化反应消除了干法蚀刻中的杂质和缺陷。FIB-STEM 测试证实这种方法是非破坏性的，因为 ICP 技术可实现各向同性蚀刻，并且 CMP 不会对基材造成新的损伤。这种方法提高了大尺寸 GaN 单晶衬底的生产率，促进了它们在激光显示器、射频器件和电力电子领域的更广泛应用。