Cadmium zinc telluride (CZT) crystals are widely used in room temperature nuclear radiation detectors, astrophysical detectors, and radiochemical detectors due to their excellent material properties such as high resistivity, high average atomic number, and high electron mobility lifetime product. Since CZT detectors are often required to operate in harsh radiation environments, they are susceptible to irradiation damage effects. And annealing is considered to be an effective treatment method to repair the irradiation damage of CZT detectors. In this paper, low-energy He ions are used to irradiate high-resistivity CZT crystals, and the mechanism of the effect of ion irradiation on the internal defects of CZT crystals is analyzed. The electron mobility lifetime product of the CZT detector decreases after irradiation, and the carrier transport performance deteriorates. The irradiation damage of CZT crystals/detectors have been repaired by low-temperature annealing process, which shows that the optimal annealing temperature is 70 °C.

中文翻译：

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缺陷调控对 He 离子辐照 CZT 探测器物理和电学性质的影响


碲化镉锌 （CZT） 晶体因其高电阻率、高平均原子序数和高电子迁移率寿命积等优异的材料性能而被广泛用于室温核辐射探测器、天体物理探测器和放射化学探测器。由于 CZT 探测器通常需要在恶劣的辐射环境中工作，因此它们容易受到辐射损伤的影响。退火被认为是修复 CZT 探测器辐照损伤的有效治疗方法。本文利用低能量 He 离子照射高电阻率 CZT 晶体，分析了离子辐照对 CZT 晶体内部缺陷影响的机理。CZT 探测器的电子迁移率寿命积在辐照后降低，载流子传输性能变差。低温退火工艺修复了 CZT 晶体/探测器的辐照损伤，结果表明最佳退火温度为 70 °C。