Nowadays, the researcher has an eye on enhancing the performance of resistive random-access memory (RRAM) and exploring new demands and applications, particularly in the field of artificial intelligence and neural computing. It is crucially important for accurately replicating the observed plasticity within synapses to achieve superior RRAM performance in low-dimensional nanomaterials. In this work, we focus on addressing certainly unsatisfactory electrical properties of RRAM based on titanium oxide nanowire array (TiO2 NWA), for example, short retention time (∼103 s). Theoretically and experimentally, a novel and solution-based RRAM structure, namely ZrO2/TiO2(NWA), has been conducted. With the help of the ZrO2 insertion layer, the RRAM device shows impressive resistive switching characteristics, including 200 current–voltage(I-V) sweeps without degradation, increased cycling endurance (>105 cycles), and a long retention time (∼9 × 104 s). These findings hold significant implications for digital computing systems. Moreover, the successful implementation of the proposed device enables the emulation of fundamental synaptic biological features such as non-linear transmission properties, learning experiences behavior, short-term potentiation (STP) and long-term potentiation (LTP). This research provides evidence of the immense potential of the Ag/ZrO2/TiO2(NWA)/FTO RRAM device in bipolar non-volatile memory (NVM) and biomimetic neuromorphic systems.

中文翻译：

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ZrO2/TiO2异质结纳米线阵列（NWA） RRAM的电阻特性和神经响应研究


如今，研究人员着眼于提高电阻式随机存取存储器 （RRAM） 的性能，并探索新的需求和应用，特别是在人工智能和神经计算领域。对于准确复制突触内观察到的可塑性以在低维纳米材料中实现卓越的 RRAM 性能至关重要。在这项工作中，我们专注于解决基于氧化钛纳米线阵列 （TiO2 NWA） 的 RRAM 肯定不令人满意的电性能，例如，短保留时间 （∼103 s）。从理论和实验上，已经进行了一种新颖的、基于溶液的 RRAM 结构，即 ZrO2/TiO2（NWA）。在 ZrO2 插入层的帮助下，RRAM 器件显示出令人印象深刻的电阻开关特性，包括 200 次电流-电压 （I-V） 扫描而不会退化，增加的循环耐久性（>105 次循环）和长保留时间（∼9 × 104 s）。这些发现对数字计算系统具有重要意义。此外，所提出的设备的成功实施能够模拟基本的突触生物学特征，例如非线性传输特性、学习体验行为、短期增强 （STP） 和长期增强 （LTP）。这项研究证明了 Ag/ZrO2/TiO2（NWA）/FTO RRAM 器件在双极非易失性存储器 （NVM） 和仿生神经形态系统中的巨大潜力。