The detection of hydrogen sulfide (H2S) plays a critical role in environmental monitoring and breath analysis for medical diagnostics. For metal oxide semiconductor film-based gas sensors, the quality of the gas-sensitive material and the method of forming the gas-sensitive film on planar electrodes are critical determinants of sensor performance. In this study, a flower-like ZnO@ZnWO4 heterojunction was directly grown on the surface of a micro-hotplate for gas sensor applications using a two-step method involving block copolymer self-assembly and chemical vapor deposition. The gas sensors demonstrated exceptional performance in detecting H2S over a range of 50 ppb to 50 ppm. At an operating temperature of 200 °C, the gas sensor exhibited a remarkable response value (R=127.31) for 5 ppm H2S and an outstanding selectivity coefficient of 117.4. Additionally, the sensor maintained 95 % of its original response value over a month. These superior performance metrics are attributed to the n-n heterostructure between ZnO and ZnWO4, along with the extensive specific surface area and the presence of oxygen vacancies in the flower-like morphology. This novel approach not only enhances H2S detection performance but also significantly contributes to the development of gas sensors crucial for environmental monitoring and human health protection.

中文翻译：

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H2S 气体传感器化学气相沉积法ZnO@ZnWO4花状结构异质结原位生长


硫化氢 （H2S） 的检测在环境监测和医疗诊断的呼吸分析中起着至关重要的作用。对于基于金属氧化物半导体薄膜的气体传感器，气体敏感材料的质量和在平面电极上形成气体敏感膜的方法是传感器性能的关键决定因素。在本研究中，使用涉及嵌段共聚物自组装和化学气相沉积的两步方法，在用于气体传感器应用的微型热板表面直接生长出花状ZnO@ZnWO4异质结。气体传感器在检测 50 ppb 至 50 ppm 范围内的 H2S 方面表现出卓越的性能。在 200 °C 的工作温度下，气体传感器对 5 ppm H2S 表现出显著的响应值 （R=127.31） 和 117.4 的出色选择性系数。此外，传感器在一个月内保持了其原始响应值的 95%。这些卓越的性能指标归因于 ZnO 和 ZnWO4 之间的 n-n 异质结构，以及广泛的比表面积和花状形态中存在氧空位。这种新颖的方法不仅提高了 H2S 检测性能，而且为开发对环境监测和人类健康至关重要的气体传感器做出了重大贡献。