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Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments
Light: Science & Applications ( IF 20.6 ) Pub Date : 2024-09-14 , DOI: 10.1038/s41377-024-01533-y
Xulong Lv, Yanjie Liang, Yi Zhang, Dongxun Chen, Xihui Shan, Xiao-Jun Wang

Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors, which are utilized as promising rewritable memory media for optical information storage applications in dark environments. However, storage phosphors emitting in the deep ultraviolet spectral region (200–300 nm) are relatively lacking. Here, we report an appealing deep-trap ultraviolet storage phosphor, ScBO3:Bi3+, which exhibits an ultra-narrowband light emission centered at 299 nm with a full width at half maximum (FWHM) of 0.21 eV and excellent X-ray energy storage capabilities. When persistently stimulated by longer-wavelength white/NIR light or heated at elevated temperatures, ScBO3:Bi3+ phosphor exhibits intense and long-lasting ultraviolet luminescence due to the interplay between defect levels and external stimulus, while the natural decay in the dark at room temperature is extremely weak after X-ray irradiation. The impact of the spectral distribution and illuminance of ambient light and ambient temperature on ultraviolet light emission has been studied by comprehensive experimental and theoretical investigations, which elucidate that both O vacancy and Sc interstitial serve as deep electron traps for enhanced and prolonged ultraviolet luminescence upon continuous optical or thermal stimulation. Based on the unique spectral features and trap distribution in ScBO3:Bi3+ phosphor, controllable optical information read-out is demonstrated via external light or heat manipulation, highlighting the great potential of ScBO3:Bi3+ phosphor for advanced optical storage application in bright environments.



中文翻译:


用于明亮环境中先进光存储应用的深陷阱紫外持久荧光粉



人们对可见光和较长波长的红外光存储磷光体进行了广泛的研究,这些磷光体被用作黑暗环境中光学信息存储应用的有前途的可重写存储介质。然而,在深紫外光谱区(200-300 nm)发射的存储荧光粉相对缺乏。在这里,我们报道了一种引人注目的深陷阱紫外存储荧光粉,ScBO 3 :Bi 3+ ,它表现出以 299 nm 为中心的超窄带光发射,半峰全宽 (FWHM) 为 0.21 eV 和出色的 X 射线能量储存能力。当受到较长波长的白光/近红外光持续刺激或在高温下加热时,ScBO 3 :Bi 3+荧光粉由于缺陷水平和外部刺激之间的相互作用而表现出强烈且持久的紫外发光,而在黑暗中自然衰减在室温下X射线照射后极其微弱。通过综合实验和理论研究,研究了环境光和环境温度的光谱分布和照度对紫外光发射的影响,阐明了O空位和Sc间隙都作为深电子陷阱,在连续的情况下增强和延长了紫外发光。光或热刺激。基于ScBO 3 :Bi 3+荧光粉独特的光谱特征和陷阱分布,通过外部光或热操纵演示了可控的光学信息读出,凸显了ScBO 3 :Bi 3+荧光粉在先进光存储应用中的巨大潜力在明亮的环境中。

更新日期:2024-09-14
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