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Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe2–CrI3 p–n Heterojunction
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-13 , DOI: 10.1021/acsnano.4c08185 Jiamin Chen 1, 2 , Zhixuan Cheng 1, 2 , Jiahao Chen 1 , Minglai Li 1, 2 , Xionghui Jia 1, 2 , Yuqia Ran 1 , Yi Zhang 1, 2 , Yanping Li 1 , Tongjun Yu 1, 3 , Lun Dai 1, 2, 3
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-13 , DOI: 10.1021/acsnano.4c08185 Jiamin Chen 1, 2 , Zhixuan Cheng 1, 2 , Jiahao Chen 1 , Minglai Li 1, 2 , Xionghui Jia 1, 2 , Yuqia Ran 1 , Yi Zhang 1, 2 , Yanping Li 1 , Tongjun Yu 1, 3 , Lun Dai 1, 2, 3
Affiliation
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Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN–FLG–CrI3–WSe2–FLG–hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN–FLG–CrI3–FLG–hBN heterostructure was also fabricated on identical CrI3 and FLGs for better comparison. Our results show that the WSe2–CrI3 heterostructure, acting as a p–n heterojunction, has advantageous capability in light detection, especially in self-powered light helicity detecting. In the WSe2–CrI3 heterojunction, the absolute value of photocurrent IPH exhibits obvious asymmetry with respect to the bias V, with the IPH of reversely biased WSe2–CrI3 p–n heterojunction being larger. When the CrI3 is fully spin-polarized under a 3 T magnetic field, the reversely biased WSe2–CrI3 heterojunction exhibits advantageous capability in light helicity detecting. Both the short-circuit currents ISC and IPH show one-cycle fluctuation behaviors when the quarter-wave plate rotates 180°, and the corresponding photoresponsivity helicities can be as high as 18.0% and 20.1%, respectively. We attribute the spin-enhanced photovoltaic effect in the WSe2–CrI3 heterojunction and its contribution to circularly polarized light detection to the coordination function of the spin-filter CrI3, the valley electronic monolayer WSe2, and the spin-dependent charge transfer between them. Our work helps us understand the interplay between the magnetic and optoelectronic properties of WSe2–CrI3 heterojunctions and promotes the developing progress of prospective 2D spin optoelectronic devices.
中文翻译：
基于垂直 WSe2–CrI3 p–n 异质结的自旋增强自供电光螺旋度检测
二维（2D）磁性半导体为研究磁光电子特性提供了一个有趣的平台，当它们与二维过渡金属二硫属化物等谷电子材料结合时，在开发前瞻性器件方面具有巨大的潜力。在此，我们报告了垂直 hBN-FLG-CrI 3 -WSe 2 -FLG-hBN 范德华异质结构的各种磁光响应特征。通过合理的布局和精致的操作，还在相同的 CrI 3和 FLG 上制造了 hBN-FLG-CrI 3 -FLG-hBN 异质结构，以便更好地进行比较。我们的结果表明，WSe 2 –CrI 3异质结构作为p – n异质结，在光检测方面具有优势，特别是在自供电光螺旋性检测方面。在WSe 2 –CrI 3异质结中，光电流IP PH的绝对值相对于偏压V表现出明显的不对称性，其中反向偏压的WSe 2 –CrI 3 p-n异质结的IP PH更大。当CrI 3在3 T磁场下完全自旋极化时，反向偏置的WSe 2 -CrI 3异质结在光螺旋度检测中表现出优越的能力。当四分之一波片旋转180°时，短路电流I SC和I PH均表现出单周期波动行为，相应的光响应螺旋度可分别高达18.0%和20.1%。 我们将WSe 2 –CrI 3异质结中的自旋增强光伏效应及其对圆偏振光检测的贡献归因于自旋过滤器CrI 3 、谷电子单层WSe 2的协调功能以及自旋相关的电荷转移他们之间。我们的工作帮助我们理解WSe 2 –CrI 3异质结的磁和光电性质之间的相互作用，并促进前瞻性二维自旋光电器件的发展进步。
更新日期：2024-09-13
中文翻译：
基于垂直 WSe2–CrI3 p–n 异质结的自旋增强自供电光螺旋度检测
二维（2D）磁性半导体为研究磁光电子特性提供了一个有趣的平台，当它们与二维过渡金属二硫属化物等谷电子材料结合时，在开发前瞻性器件方面具有巨大的潜力。在此，我们报告了垂直 hBN-FLG-CrI 3 -WSe 2 -FLG-hBN 范德华异质结构的各种磁光响应特征。通过合理的布局和精致的操作，还在相同的 CrI 3和 FLG 上制造了 hBN-FLG-CrI 3 -FLG-hBN 异质结构，以便更好地进行比较。我们的结果表明，WSe 2 –CrI 3异质结构作为p – n异质结，在光检测方面具有优势，特别是在自供电光螺旋性检测方面。在WSe 2 –CrI 3异质结中，光电流IP PH的绝对值相对于偏压V表现出明显的不对称性，其中反向偏压的WSe 2 –CrI 3 p-n异质结的IP PH更大。当CrI 3在3 T磁场下完全自旋极化时，反向偏置的WSe 2 -CrI 3异质结在光螺旋度检测中表现出优越的能力。当四分之一波片旋转180°时，短路电流I SC和I PH均表现出单周期波动行为，相应的光响应螺旋度可分别高达18.0%和20.1%。 我们将WSe 2 –CrI 3异质结中的自旋增强光伏效应及其对圆偏振光检测的贡献归因于自旋过滤器CrI 3 、谷电子单层WSe 2的协调功能以及自旋相关的电荷转移他们之间。我们的工作帮助我们理解WSe 2 –CrI 3异质结的磁和光电性质之间的相互作用，并促进前瞻性二维自旋光电器件的发展进步。
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