Hybrid organic–inorganic perovskite (HOIP) ferroelectrics exhibit polarization reversibility and have a wide range of applications in the fields of smart switches, memorizers, sensors, etc. However, the inherent limitations of small spontaneous polarization (P_s) and large coercive field (E_c) in ferroelectrics have impeded their broader utilization in electronics and data storage. Molecular ferroelectrics, as a powerful supplement to inorganic ferroelectrics, have shown great potential in the new generation of flexible wearable electronic devices. The important research responsibility is to greatly improve progressiveness and overcome the above limitations. Here, a novel one-dimensional (1D) HOIP ferroelectric, (3-F-BTAB)PbBr₃ (3-F-BTAB = 3-fluorobenzyltrimethylammonium), was successfully synthesized by employing the H/F substitution strategy to modify parent compound (BTAB)PbBr₃ (BTAB = benzyltrimethylammonium), which undergoes a ferroelectric phase transition with Aizu notation 2/mF2 at 420 K. Notably, (3-F-BTAB)PbBr₃ demonstrates exceptional ferroelectric properties with a large P_s of 7.18 μC cm⁻² and a low E_c of 1.78 kV cm⁻¹. As far as we know, (3-F-BTAB)PbBr₃ features the largest P_s among those reported for 1D lead-based HOIP ferroelectrics. This work enriches the 1D lead-based ferroelectric family and provides guidance for applying ferroelectrics in low-voltage polar memories.

中文翻译：

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H/F替代策略可以在一维杂化钙钛矿铁电体中实现大自发极化


有机-无机杂化钙钛矿（ _HOIP ）铁电体具有极化可逆性，在智能开关、存储器、传感器等领域有着广泛的应用。然而，其固有的局限性在于自发极化（ Ps ）小、矫顽场大（ E _c ）在铁电体中的应用阻碍了它们在电子和数据存储中的更广泛应用。分子铁电体作为无机铁电体的有力补充，在新一代柔性可穿戴电子设备中展现出了巨大的潜力。重要的研究责任是大大提高先进性并克服上述局限性。在这里，通过采用H/F取代策略修饰母体化合物，成功合成了一种新型一维（1D）HOIP铁电体，(3-F-BTAB)PbBr ₃ (3-F-BTAB = 3-氟苄基三甲基铵)。 BTAB)PbBr ₃ (BTAB = 苄基三甲基铵)，在 420 K 下发生铁电相变，Aizu 符号为 2/ m F2。值得注意的是，(3-F-BTAB)PbBr ₃表现出优异的铁电性能， P _s高达 7.18 μC cm ^-2和1.78 kV cm ^-1的低E _c 。 据我们所知，(3-F-BTAB)PbBr ₃在已报道的一维铅基 HOIP 铁电体中具有最大的P _s 。这项工作丰富了一维铅基铁电体家族，并为铁电体在低压极性存储器中的应用提供了指导。