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Topological van der Waals Contact for Two-Dimensional Semiconductors
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-12 , DOI: 10.1021/acsnano.4c07585 Soheil Ghods 1, 2 , Hyunjin Lee 2 , Jun-Hui Choi 1 , Ji-Yun Moon 3 , Sein Kim 1 , Seung-Il Kim 1, 3 , Hyung Jun Kwun 1 , Mukkath Joseph Josline 1 , Chan Young Kim 1 , Sang Hwa Hyun 1 , Sang Won Kim 4, 5 , Seok-Kyun Son 6, 7 , Taehun Lee 8 , Yoon Kyeung Lee 8, 9 , Keun Heo 2 , Kostya S Novoselov 7 , Jae-Hyun Lee 1, 7
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-12 , DOI: 10.1021/acsnano.4c07585 Soheil Ghods 1, 2 , Hyunjin Lee 2 , Jun-Hui Choi 1 , Ji-Yun Moon 3 , Sein Kim 1 , Seung-Il Kim 1, 3 , Hyung Jun Kwun 1 , Mukkath Joseph Josline 1 , Chan Young Kim 1 , Sang Hwa Hyun 1 , Sang Won Kim 4, 5 , Seok-Kyun Son 6, 7 , Taehun Lee 8 , Yoon Kyeung Lee 8, 9 , Keun Heo 2 , Kostya S Novoselov 7 , Jae-Hyun Lee 1, 7
Affiliation
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The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb2Te3 topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials. We successfully fabricate p-type and n-type transistors using monolayer and multilayer WSe2, achieving ultralow SBH (∼24 meV) and contact resistance (∼0.71 kΩ·μm). Simulations highlight the role of topological surface states in Sb2Te3, which effectively mitigate the MIGS effect, thereby significantly elevating device efficiency. Our experimental insights revealed the semiohmic behavior of Sb2Te3 T-vdW contacts, with an exceptional photoresponsivity of 716 A/W and rapid response times of approximately 60 μs. The findings presented herein herald topological contacts as a superior alternative to traditional metal contacts, potentially revolutionizing the performance of miniaturized electronic and optoelectronic devices.
中文翻译：
二维半导体的拓扑范德华接触
互补金属氧化物半导体技术固有的不断小型化给二维 (2D) 材料和金属电极的界面带来了挑战。这些挑战主要源于金属诱导间隙态 (MIGS) 和肖特基势垒高度 (SBH)，严重阻碍了器件性能。这项工作介绍了无损伤Sb 2 Te 3拓扑范德华（T-vdW）接触的创新实现，代表了二维材料的终极接触电极。我们成功地利用单层和多层WSe 2制造了p型和n型晶体管，实现了超低SBH（~24 meV）和接触电阻（~0.71 kΩ·μm）。模拟强调了Sb 2 Te 3中拓扑表面态的作用，它有效地减轻了MIGS效应，从而显着提高了器件效率。我们的实验见解揭示了 Sb 2 Te 3 T-vdW 接触的半欧姆行为，具有 716 A/W 的出色光响应性和大约 60 μs 的快速响应时间。本文提出的发现预示着拓扑接触作为传统金属接触的优越替代品，有可能彻底改变微型电子和光电器件的性能。
更新日期：2024-09-12
中文翻译：
二维半导体的拓扑范德华接触
互补金属氧化物半导体技术固有的不断小型化给二维 (2D) 材料和金属电极的界面带来了挑战。这些挑战主要源于金属诱导间隙态 (MIGS) 和肖特基势垒高度 (SBH)，严重阻碍了器件性能。这项工作介绍了无损伤Sb 2 Te 3拓扑范德华（T-vdW）接触的创新实现，代表了二维材料的终极接触电极。我们成功地利用单层和多层WSe 2制造了p型和n型晶体管，实现了超低SBH（~24 meV）和接触电阻（~0.71 kΩ·μm）。模拟强调了Sb 2 Te 3中拓扑表面态的作用，它有效地减轻了MIGS效应，从而显着提高了器件效率。我们的实验见解揭示了 Sb 2 Te 3 T-vdW 接触的半欧姆行为，具有 716 A/W 的出色光响应性和大约 60 μs 的快速响应时间。本文提出的发现预示着拓扑接触作为传统金属接触的优越替代品，有可能彻底改变微型电子和光电器件的性能。
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