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Epitaxial Growth of Monolayer WS2 Single Crystals on Au(111) Toward Direct Surface-Enhanced Raman Spectroscopy Detection
ACS Nano ( IF 15.8 ) Pub Date : 2024-09-12 , DOI: 10.1021/acsnano.4c09187
Jialong Wang 1 , Yue Lu 2 , Wenzhi Quan 1, 3 , Jingyi Hu 1, 3 , Pengfei Yang 1, 3 , Ge Song 4 , Jiatian Fu 1 , You Peng 1, 3 , Lianming Tong 4 , Qingqing Ji 2 , Yanfeng Zhang 1, 3
Affiliation  

The epitaxial growth of wafer-scale two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDCs) single crystals is the key premise for their applications in next-generation electronics. Despite significant advancements, some fundamental factors affecting the epitaxy growth have not been fully uncovered, e.g., interface coupling strength, adlayer-substrate lattice matching, substrate step-edge-guiding effects, etc. Herein, we develop a model system to tackle these issues concurrently, and realize the epitaxial growth of wafer-scale monolayer tungsten disulfide (WS2) single crystals on the Au(111) substrate. This epitaxial system is featured with good adlayer-substrate lattice matching, obvious step-edge-guiding effect for the unidirectionally aligned nucleation/growth, and relatively weaker interfacial interaction than that of monolayer MoS2/Au(111), as evidenced by the evolution of a uniform Moiré pattern and an intrinsic band gap, according to on-site scanning tunneling microscopy/spectroscopy (STM/STS) characterizations and density functional theory calculations. Intriguingly, the unidirectionally aligned monolayer WS2 domains along the Au(111) steps can behave as ultrasensitive templates for surface-enhanced Raman scattering detection of organic molecules, due to the obvious charge transfer occurred at substrate step edges. This work should hereby deepen our understanding of the epitaxy mechanism of 2D STMDCs on single-crystal substrates, and propel their wafer-scale production and applications in various cutting-edge fields.

中文翻译:


Au(111) 上单层 WS2 单晶的外延生长用于直接表面增强拉曼光谱检测



晶圆级二维(2D)半导体过渡金属二硫化物(STMDC)单晶的外延生长是其在下一代电子产品中应用的关键前提。尽管取得了重大进展,但影响外延生长的一些基本因素尚未被完全揭示,例如界面耦合强度、adlayer-衬底晶格匹配、衬底阶梯边缘引导效应等。在此,我们开发了一个模型系统来解决这些问题同时,在Au(111)衬底上实现了晶圆级单层二硫化钨( WS2 )单晶的外延生长。该外延体系具有良好的adlayer-substrate晶格匹配、明显的单向排列成核/生长的阶梯边缘引导效应以及比单层MoS 2 /Au(111)相对较弱的界面相互作用,这一点由演化过程证明。根据现场扫描隧道显微镜/光谱学 (STM/STS) 表征和密度泛函理论计算,形成均匀的莫尔图案和固有带隙。有趣的是,由于基板台阶边缘发生明显的电荷转移,沿 Au(111) 台阶单向排列的单层 WS 2域可以作为有机分子表面增强拉曼散射检测的超灵敏模板。这项工作将加深我们对单晶衬底上二维STMDC外延机制的理解,并推动其晶圆级生产和在各个前沿领域的应用。
更新日期:2024-09-12
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