Magnetoresistance is a fundamental transport phenomenon that is essential for reading the magnetic states for various information storage, innovative computing and sensor devices. Recent studies have expanded the scope of magnetoresistances to the nonlinear regime, such as a bilinear magnetoelectric resistance (BMER), which is proportional to both electric field and magnetic field. Here we demonstrate that the BMER is a general phenomenon that arises even in three-dimensional systems without explicit momentum-space spin textures. Our theory suggests that the spin Hall effect enables the BMER provided that the magnitudes of spin accumulation at the top and bottom interfaces are not identical. The sign of the BMER follows the sign of the spin Hall effect of heavy metals, thereby evidencing that the BMER originates from the bulk spin Hall effect. Our observation suggests that the BMER serves as a general nonlinear transport characteristic in three-dimensional systems, especially playing a crucial role in antiferromagnetic spintronics.

磁阻是一种基本的传输现象，对于读取各种信息存储、创新计算和传感器设备的磁态至关重要。最近的研究将磁阻的范围扩展到非线性状态，例如与电场和磁场成正比的双线性磁电阻 （BMER）。在这里，我们证明了 BMER 是一种普遍现象，即使在没有明确的动量空间自旋纹理的三维系统中也会出现。我们的理论表明，如果顶部和底部界面的自旋累积幅度不同，则自旋霍尔效应使 BMER 成为可能。BMER 的符号遵循重金属的自旋霍尔效应的符号，从而证明 BMER 起源于体自旋霍尔效应。我们的观察表明，BMER 在三维系统中起着一般的非线性输运特性，特别是在反铁磁自旋电子学中起着至关重要的作用。