The valley degree of freedom in two-dimensional (2D) materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more advanced valleytronics circuits. We demonstrate a device architecture of a point junction where a valley-chiral 0D PN junction is easily configured, switchable, and capable of carrying valley current with an estimated polarization of ~80%. This work provides a building block in manipulating valley quantum numbers and scalable valleytronics.

中文翻译：

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易于配置的石墨烯点结中的零维谷-手性模式


二维 （2D） 材料中的谷自由度可以用于称为 valleytronics 的低耗散量子电子器件。在具有不同原子或静电构型的双层石墨烯的两个区域之间的边界处，实现了谷极化电流。然而，苛刻的制造和操作要求限制了器件的可重复性和可扩展性，使其能够实现更先进的 valleytronics 电路。我们演示了点结的器件架构，其中谷手性 0D PN 结易于配置、可切换，并且能够承载估计极化为 ~80% 的谷电流。这项工作为操纵谷量子数和可扩展的 valleytronics 提供了构建块。