Motivated by advances in spintronic devices, extensive explorations are underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of an intrinsic skyrmion state in the van der Waals ferromagnet Fe₃GaTe₂. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe₃GaTe₂ flakes. The ordering of skyrmion state is further analyzed. Our results suggest Fe₃GaTe₂ emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.

中文翻译：

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室温下 Fe3GaTe2 中斯格明子晶格的局部操作


在自旋电子学器件进步的推动下，人们正在进行广泛的探索，以发现具有拓扑保护自旋纹理的材料，以斯格明子为例。斯格明子在范德华 （vdW） 材料中的潜在应用涉及的一个关键挑战是在室温下实现和操纵斯格明子。在这项研究中，我们报道了范德华铁磁体 Fe₃GaTe₂ 中本征斯格明子态的产生。通过采用变温磁力显微镜，可以在 Fe₃GaTe₂ 薄片上局部操纵斯格明子晶格。进一步分析了 Skyrmion 状态的排序。我们的结果表明，Fe₃GaTe₂ 成为实现基于 skyrmion 的分层自旋电子存储器件的非常有前途的竞争者。