As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore’s Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of preparing dielectric layers via solution methods is lower, and the preparation cycle is shorter. This paper utilizes a low-temperature self-exothermic reaction based on the solution method to prepare high-performance Al2O3 dielectric thin films that are compatible with flexible substrates. In this paper, we first established two non-self-exothermic systems: one with pure aluminum nitrate and one with pure aluminum acetylacetonate. Additionally, we set up one self-exothermic system where aluminum nitrate and aluminum acetylacetonate were mixed in a 1:1 ratio. Tests revealed that the leakage current density and dielectric constant of the self-exothermic system devices were significantly optimized compared to the two non-self-exothermic system devices, indicating that the self-exothermic reaction can effectively improve the quality of the dielectric film. This paper further established two self-exothermic systems with aluminum nitrate and aluminum acetylacetonate mixed in 2:1 and 1:2 ratios, respectively, for comparison. The results indicate that as the proportion of aluminum nitrate increases, the overall dielectric performance of the devices improves. The best overall performance occurs when aluminum nitrate and aluminum acetylacetonate are mixed in a ratio of 2:1: The film surface is smooth without cracks; the surface roughness is 0.747 ± 0.045 nm; the visible light transmittance reaches up to 98%; on the basis of this film, MIM devices were fabricated, with tested leakage current density as low as 1.08 × 10−8 A/cm2 @1 MV and a relative dielectric constant as high as 8.61 ± 0.06, demonstrating excellent electrical performance.

中文翻译：

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基于溶液法的自放热反应制备高性能透明Al2O3介电薄膜及应用


随着提高集成电路集成度和性能的竞争加剧，根据著名的摩尔定律，对电子器件中的介电层提出了更高的性能和更小的尺寸的要求。与真空法相比，溶液法制备介质层的生产成本更低，制备周期更短。本文利用基于溶液法的低温自放热反应制备了与柔性基板兼容的高性能Al2O3介电薄膜。在本文中，我们首先建立了两种非自放热体系：一种是纯硝酸铝，一种是纯乙酰丙酮铝。此外，我们建立了一种自放热系统，其中硝酸铝和乙酰丙酮铝以 1:1 的比例混合。测试表明，与两种非自放热系统器件相比，自放热系统器件的漏电流密度和介电常数显着优化，表明自放热反应可以有效提高介电薄膜的质量。本文进一步建立了两种硝酸铝和乙酰丙酮铝分别以2:1和1:2比例混合的自放热体系进行比较。结果表明，随着硝酸铝比例的增加，器件的整体介电性能得到改善。当硝酸铝和乙酰丙酮铝以2:1的比例混合时，综合性能最佳：膜表面光滑，无裂纹；表面粗糙度为0.747±0。045纳米；可见光透过率高达98%；在此薄膜的基础上制作了MIM器件，经测试漏电流密度低至1.08×10−8 A/cm2@1 MV，相对介电常数高达8.61±0.06，表现出优异的电性能。