The drift characteristics of valence change memory (VCM) devices have been analyzed through both experimental analysis and 3D kinetic Monte Carlo (kMC) simulations. By simulating six distinct low-resistance states (LRS) over a 24-hour period at room temperature, we aim to assess the device temporal stability and retention. Our results demonstrate the feasibility of multi-level operation and reveal insights into the conductive filament (CF) dynamics. The cumulative distribution functions (CDFs) of read-out currents measured at different time intervals provide a comprehensive view of the device performance for the different conductance levels. These findings not only enhance the understanding of VCM device switching behaviour but also allow the development of strategies for improving retention, thereby advancing the development of reliable nonvolatile resistive switching memory technologies.

中文翻译：

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基于 HfO2 的多能级 RRAM 器件中电导漂移的动力学蒙特卡罗仿真分析


通过实验分析和 3D 动力学蒙特卡洛 （kMC） 仿真分析了价变存储器 （VCM） 器件的漂移特性。通过在室温下模拟 24 小时内的六种不同的低电阻状态 （LRS），我们旨在评估设备的时间稳定性和保留性。我们的结果证明了多级操作的可行性，并揭示了对导电丝 （CF） 动力学的见解。在不同时间间隔测量的读出电流的累积分布函数 （CDF） 提供了不同电导水平下器件性能的全面视图。这些发现不仅增强了对 VCM 器件开关行为的理解，而且还允许开发提高保持率的策略，从而推动可靠的非易失性电阻开关存储技术的发展。