Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles,Physical Review Letters

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Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles
Physical Review Letters ( IF 8.1 ) Pub Date : 2024-09-10 , DOI: 10.1103/physrevlett.133.116402
Jae-Mo Lihm _{1,

1,

2} , Cheol-Hwan Park _{1,

1,

2}

Affiliation

Although plasmons and phonons are the collective excitations that govern the low-energy physics of doped semiconductors, their nonadiabatic hybridization and mutual screening have not been studied from first principles. We achieve this goal by transforming the Dyson equation to the frequency-independent dynamical matrix of an equivalent damped oscillator. Calculations on doped GaAs and

{TiO}_{2}

agree well with available Raman data and await immediate experimental confirmation from infrared, neutron, electron-energy-loss, and angle-resolved photoemission spectroscopies.

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