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Dzyaloshinskii-Moriya interaction transistor with magnetization manipulated by electric field
Physical Review B ( IF 3.2 ) Pub Date : 2024-09-11 , DOI: 10.1103/physrevb.110.094418
Cheng Ma 1, 2 , Kui-Juan Jin 1, 2 , Er-Jia Guo 1, 2 , Chen Ge 1, 2 , Can Wang 1, 2 , Xiu-Lai Xu 1, 3
Affiliation  

Electric-field control of magnetization is crucial for next-generation spintronic devices with reduced energy consumption and increased integration density. Based on magnetoelectric multiferroics whose Dzyaloshinskii-Moriya interaction (DMI) vectors are coupled to their polarization, we propose the architecture of a DMI transistor which utilizes voltage-controlled DMI torque to reverse the magnetization orientation, enabling current-free magnetization reversal. By leveraging the properties of a CrN monolayer, we demonstrate the feasibility of the DMI transistor through first-principles calculations, micromagnetic simulations, and analytical calculations. We find that the switching time of the DMI transistor (in subnanoseconds) increases with the exchange interaction and decreases with the DMI. We also show how the size of the DMI transistor (in nanometers) depends on the exchange interaction and the DMI and how it can be further tuned by the magnetic anisotropy. In this paper, we pave the way toward highly desired electric-field control and current-free ultrafast spintronic devices, with the potential toward logic-in-memory architecture overcoming the von Neumann bottleneck.

中文翻译:


电场控制磁化的 Dzyaloshinskii-Moriya 相互作用晶体管



磁化强度的电场控制对于降低能耗和提高集成密度的下一代自旋电子器件至关重要。基于其 Dzyaloshinskii-Moriya 相互作用 (DMI) 矢量与其极化耦合的磁电多铁性材料,我们提出了 DMI 晶体管的架构,该架构利用电压控制的 DMI 扭矩来反转磁化方向,从而实现无电流磁化反转。通过利用 CrN 单层的特性,我们通过第一性原理计算、微磁模拟和分析计算证明了 DMI 晶体管的可行性。我们发现 DMI 晶体管的开关时间(以亚纳秒为单位)随着交换相互作用的增加而增加,并随着 DMI 的增加而减少。我们还展示了 DMI 晶体管的尺寸(以纳米为单位)如何取决于交换相互作用和 DMI,以及如何通过磁各向异性进一步调节它。在本文中,我们为实现高度期望的电场控制和无电流超快自旋电子器件铺平了道路,并具有克服冯·诺依曼瓶颈的内存逻辑架构的潜力。
更新日期:2024-09-11
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