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Pressure-induced metallization and loss of surface magnetism in FeSi
Physical Review B ( IF 3.2 ) Pub Date : 2024-09-11 , DOI: 10.1103/physrevb.110.l121403 Yuhang Deng 1 , Farhad Taraporevala 1 , Haozhe Wang 2 , Eric Lee-Wong 1 , Camilla M. Moir 1 , Jinhyuk Lim 3 , Shubham Sinha 3 , Weiwei Xie 2 , James Hamlin 3 , Yogesh Vohra 4 , M. Brian Maple 1
Physical Review B ( IF 3.2 ) Pub Date : 2024-09-11 , DOI: 10.1103/physrevb.110.l121403 Yuhang Deng 1 , Farhad Taraporevala 1 , Haozhe Wang 2 , Eric Lee-Wong 1 , Camilla M. Moir 1 , Jinhyuk Lim 3 , Shubham Sinha 3 , Weiwei Xie 2 , James Hamlin 3 , Yogesh Vohra 4 , M. Brian Maple 1
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Single-crystalline FeSi samples with a conducting surface state were studied under high pressure and magnetic field by means of electrical resistance measurements to explore how the bulk semiconducting state and the surface state are tuned by the application of pressure. We found that the energy gap associated with the semiconducting bulk phase begins to close abruptly at a critical pressure of ∼10 GPa and the bulk material becomes metallic with no obvious sign of any emergent phases or non-Fermi liquid behavior in temperature dependent electrical resistance in the neighborhood of the critical pressure above 3 K. Moreover, the metallic phase appears to remain at near-ambient pressure upon release of the pressure. Interestingly, the hysteresis in the electrical resistance vs magnetic field curve associated with the magnetically ordered conducting surface state decreases with pressure and vanishes at the critical pressure, while the slope of the electrical resistance vs magnetic field curve, which has a negative value for pressure below the critical pressure, decreases in magnitude with pressure and changes sign at the critical pressure. Thus the conducting surface state and the corresponding two-dimensional magnetic order collapse at the critical pressure where the energy gap of the bulk material starts to close abruptly, revealing the connection between the conducting surface state and the semiconducting bulk state in FeSi.
中文翻译：
FeSi 中压力诱导金属化和表面磁性损失
通过电阻测量在高压和磁场下研究了具有导电表面态的单晶 FeSi 样品，以探索如何通过施加压力来调节块体半导体态和表面态。我们发现，与半导体体相相关的能隙在〜10 GPa的临界压力下开始突然关闭，并且体材料变成金属，没有任何出现相的明显迹象或温度依赖性电阻中的非费米液体行为高于 3 K 的临界压力附近。此外，释放压力后，金属相似乎仍保持在接近环境压力的状态。有趣的是，与磁有序导电表面状态相关的电阻与磁场曲线中的磁滞随着压力的增加而减小，并在临界压力处消失，而电阻与磁场曲线的斜率在压力低于临界压力，其大小随压力而减小，并在临界压力处改变符号。因此，导电表面态和相应的二维磁序在临界压力下崩溃，此时块体材料的能隙开始突然关闭，揭示了FeSi中导电表面态和半导体块体态之间的联系。
更新日期：2024-09-11
中文翻译：
FeSi 中压力诱导金属化和表面磁性损失
通过电阻测量在高压和磁场下研究了具有导电表面态的单晶 FeSi 样品，以探索如何通过施加压力来调节块体半导体态和表面态。我们发现，与半导体体相相关的能隙在〜10 GPa的临界压力下开始突然关闭，并且体材料变成金属，没有任何出现相的明显迹象或温度依赖性电阻中的非费米液体行为高于 3 K 的临界压力附近。此外，释放压力后，金属相似乎仍保持在接近环境压力的状态。有趣的是，与磁有序导电表面状态相关的电阻与磁场曲线中的磁滞随着压力的增加而减小，并在临界压力处消失，而电阻与磁场曲线的斜率在压力低于临界压力，其大小随压力而减小，并在临界压力处改变符号。因此，导电表面态和相应的二维磁序在临界压力下崩溃，此时块体材料的能隙开始突然关闭，揭示了FeSi中导电表面态和半导体块体态之间的联系。
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