This study reports on the fabrication of quantum dot light-emitting diodes (QLEDs) with an ITO/Ni1−x Mg x O/SAM/TFB/QDs/ZnMgO/Al structure and investigates the effects of various Mg doping concentrations in NiO on device performance. By doping Mg into the inorganic hole-injection layer NiO (Ni1−x Mg x O), we improved the band alignment with the hole-injection layer through band tuning, which enhanced charge balance. Optimal Mg doping ratios, particularly a Ni0.9Mg0.1O composition, have demonstrated superior device functionality, underscoring the need for fine-tuned doping levels. Further enhancements were achieved through surface treatments of Ni0.9Mg0.1O with UV-Ozone (UVO) and thermal annealing (TA) of the ZnMgO electron transport layer. Consequently, by optimizing Mg-doped NiO in QLED devices, we achieved a maximum external quantum efficiency of 8.38 %, a brightness of 66,677 cd/m2, and a current efficiency of 35.31 cd/A, indicating improved performance. The integration of Mg-doped NiO into the QLED structure resulted in a device with superior charge balance and overall performance, which is a promising direction for future QLED display technologies.

中文翻译：

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镁掺杂对量子点发光二极管NiO空穴注入层的影响


本研究报告了具有 ITO/Ni1−x Mg x O/SAM/TFB/QDs/ZnMgO/Al 结构的量子点发光二极管 (QLED) 的制造，并研究了 NiO 中不同 Mg 掺杂浓度对器件的影响表现。通过将Mg掺杂到无机空穴注入层NiO（Ni1−x Mg x O）中，我们通过能带调节改善了与空穴注入层的能带对准，从而增强了电荷平衡。最佳的 Mg 掺杂比例，特别是 Ni0.9Mg0.1O 成分，已证明了卓越的器件功能，强调了微调掺杂水平的需要。通过使用紫外臭氧 (UVO) 对 Ni0.9Mg0.1O 进行表面处理以及 ZnMgO 电子传输层的热退火 (TA)，进一步增强了性能。因此，通过优化QLED器件中的Mg掺杂NiO，我们实现了8.38%的最大外量子效率、66,677 cd/m2的亮度和35.31 cd/A的电流效率，表明性能得到了改善。将掺镁NiO集成到QLED结构中可以使器件具有优异的电荷平衡和整体性能，这是未来QLED显示技术的一个有前途的方向。