Schottky contacts have attracted widespread attention from both the electronic device industry and researchers since their discovery. The Schottky characteristics make these contacts highly suitable for use in field-effect transistors (FETs), photodetectors (PDs), solar cells (SCs), resistive-switching memories (RSMs), thin-film transistors (TFTs), etc. However, how do Schottky contacts affect the device performance? The answer lies simply in the Schottky parameters. This review focuses on the extraction of Schottky parameters, i.e., the Schottky barrier height (SBH), ideality factor (IF), and series resistance (SR), from the current-voltage (I−V) curve to understand and analyze the characteristics of Schottky devices. First, the current research progress in this field and the principles of Schottky contacts are presented. Second, this article delves into some classic and widely used extraction methods as well as the latest extraction methods, providing an objective evaluation based on their practical effectiveness. Then, several research applications, including studies that require extraction, simple extraction, and delicate extraction, are enumerated to demonstrate the necessity and importance of Schottky parameter analysis. Finally, an outlook and future research prospects are discussed based on recent progress, and a comprehensive summary is given.

中文翻译：

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肖特基参数提取及应用进展


肖特基触点自被发现以来，引起了电子设备行业和研究人员的广泛关注。肖特基特性使这些触点非常适合用于场效应晶体管 （FET）、光电探测器 （PD）、太阳能电池 （SC）、电阻开关存储器 （RSM）、薄膜晶体管 （TFT） 等。但是，肖特基触点如何影响器件性能？答案就在于肖特基参数。本文重点介绍从电流-电压 （I-V） 曲线中提取肖特基参数，即肖特基势垒高度 （SBH） 、理想因子 （IF） 和串联电阻 （SR），以了解和分析肖特基器件的特性。首先，介绍了该领域的当前研究进展和肖特基接触的原理。其次，本文深入探讨了一些经典且应用广泛的提取方法以及最新的提取方法，并根据其实际效果进行了客观的评价。然后，列举了几种研究应用，包括需要提取、简单提取和精细提取的研究，以证明肖特基参数分析的必要性和重要性。最后，结合近期进展，对研究前景进行了展望和展望，并给出了全面的总结。