Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays,Physical Review B

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Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
Physical Review B ( IF 3.2 ) Pub Date : 2024-09-10 , DOI: 10.1103/physrevb.110.125414
Jesus D. Cifuentes ₁ , Tuomo Tanttu _{1,

1} , Paul Steinacker ₁ , Santiago Serrano ₁ , Ingvild Hansen ₁ , James P. Slack-Smith ₁ , Will Gilbert _{1,

1} , Jonathan Y. Huang ₁ , Ensar Vahapoglu _{1,

1} , Ross C. C. Leon ₁ , Nard Dumoulin Stuyck _{1,

1} , Kohei Itoh ₂ , Nikolay Abrosimov ₃ , Hans-Joachim Pohl ₄ , Michael Thewalt ₅ , Arne Laucht _{1,

1} , Chih Hwan Yang _{1,

1} , Christopher C. Escott _{1,

1} , Fay E. Hudson _{1,

1} , Wee Han Lim _{1,

1} , Rajib Rahman ₁ , Andrew S. Dzurak _{1,

1} , Andre Saraiva _{1,

1}

Affiliation

Current complementary metal-oxide semiconductor (CMOS) quantum processors employ dense gate arrays to define quantum dots, making them susceptible to crosstalk from capacitive coupling between the dots and the neighboring gates. Small but sizable spin-orbit interactions can transfer this electrostatic crosstalk to the spin

g

factors, creating a dependence of the Larmor frequency on the electric field generated by gate electrodes positioned tens of nanometers apart. We study the Stark shift from tens of CMOS spin qubits measured in nine devices and develop a theoretical framework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays. This includes electric fluctuations that limit qubit coherence times

T_{2}^{*}

. The results will aid in the design of robust strategies to scale CMOS quantum technology.

中文翻译：

静电串扰对密集 CMOS 量子点阵列中自旋量子位的影响

当前的互补金属氧化物半导体 (CMOS) 量子处理器采用密集

g

使用阵列来定义量子点，使它们容易受到点与相邻栅极之间电容耦合的串扰的影响。小但相当大的自旋轨道相互作用可以将这种静电串扰转移到自旋 g 因子，从而产生拉莫尔频率对相距数十纳米的栅电极产生的电场的依赖性。我们研究了在九个设备中测量的数十个 CMOS 自旋量子位的斯塔克位移，并开发了一个理论框架来解释电场如何与日益复杂的阵列中的电子自旋耦合。这包括限制量子位相干时间的电波动